Hot surface igniters and methods of making same

ABSTRACT

A method of making a hot surface igniter is described. A silicon carbide composition that includes both fines fraction and a coarse fraction is sintered in a nitrogen and argon reducing atmosphere in a manner that controls the incorporation of nitrogen with in the lattice of recrystallized silicon carbide. The controlled incorporation of nitrogen in the lattice provides enhanced control over heating and electrical properties, while simultaneously achieving a lower surface area fully recrystallized structure for oxidation resistance and long service life.

FIELD

This disclosure relates to hot surface igniters, and in particular,methods of making hot surface igniters by recrystallizing siliconcarbide fines in a reducing atmosphere.

BACKGROUND

Hot surface igniters are used to ignite combustion gases in a variety ofdomestic and industrial appliances, including furnaces, kitchen ranges,and clothing dryers. The igniters typically include a semi-conductiveceramic body with terminal ends across which a potential difference isapplied. Current flowing through the ceramic body causes the body toheat up and increase in temperature, providing a source of ignition forcombustion gases.

When in service, igniters are typically subject to variable linevoltages. Igniters are typically specified to achieve a certain minimumtemperature at a minimum expected voltage (T_(Vmin)) within a specifiedperiod of time and not to exceed a certain maximum temperature at themaximum line voltage (T_(Vmax)). The nominal line voltage that istypically expected to be encountered lies between the minimum and themaximum, and it is often preferred that when operating at the nominalline voltage, the igniter temperature is as close to T_(Vmin) aspossible, while still exceeding it. For example, in the United States,the nominal line voltage to appliances such as a gas range and aresidential furnace is 120V, maximum line voltage is 132V and minimumexpected voltage is 102V.

A key property of hot surface igniters is their resistivity, which is anintrinsic property of the igniter material:ρ=R(A/L)  (1)

-   -   where, ρ=resistivity (ohm-cm)        -   R=resistance (ohms)        -   L=length (cm)        -   A=cross-sectional area (cm²)

As equation (1) indicates, the length and cross-sectional area can bevaried in forming an igniter body out of a given material to obtain adesired resistance. Resistivity is temperature dependent. Thus, a givenigniter material will typically exhibit a different resistivity at roomtemperature and at the service temperature of the igniter (hightemperature resistivity).

The ratio of room temperature resistivity to high temperatureresistivity is an important igniter property for several reasons. First,if the ratio is too high or low, then room temperature performance willnot be a good indicator of high temperature performance. Apart from theratio, if the room temperature resistivity is too low, the igniter willreach T_(Vmax) at a voltage that is less than the maximum line voltage,V_(max). This excessive heating will tend to shorten the igniter life.Apart from the ratio, if the room temperature resistivity is too high,the igniter may not reach the ignition temperature of the gas it isintended to ignite within the desired time frame.

In addition, in the fabrication process, igniters are often slotted tocreate legs of reduced cross-sectional area. The slotting process isoften carried out dynamically by measuring the room temperatureresistance as a slot is progressively lengthened until the desired roomtemperature resistance is achieved. The room temperature resistance isused to shorten the testing time following adjustments to slot length.However, if the room temperature resistance does not correlate well withthe high temperature resistance, a given igniter may be slottedincorrectly and unable to achieve the desired temperature performance.

One type of hot surface igniter material that is well known is siliconcarbide. The silicon carbide is typically formed into a slurry, shapedinto a desired igniter preform shape, and then sintered. The sinteringprocess can be adjusted to achieve desired electrical properties bydoping with electron acceptors or donors. In certain known processes,the igniter body is subjected to a reducing atmosphere that comprisesnitrogen during the sintering process to adjust the resistivity of thesilicon carbide and provide oxidation resistance. During such processes,the silicon carbide vaporizes and recrystallizes with nitrogenincorporated as an n-type dopant into the silicon carbide lattice.

In certain known silicon carbide igniter manufacturing techniques, green(unsintered) igniter bodies are sintered in an inert(nitrogen-deficient) reducing atmosphere in a first relatively highertemperature sintering phase and then sintered in a 100 percent nitrogensintering atmosphere in a second relatively lower sintering temperaturephase. In other known techniques, structural ceramic bodies are sinteredin a 100 percent nitrogen sintering atmosphere in a first sinteringphase and are then sintered in a partially-nitrogenated, reducingatmosphere in a second sintering phrase. During the second sinteringphase, the sintering temperature is ramped to a maximum sinteringtemperature, at which point the nitrogen content of the reducingatmosphere is reduced until it is entirely inert in a third sinteringphase. A fourth sintering phase is then carried out in an inert reducingatmosphere at the maximum sintering temperature. Such known sinteringtechniques are generally incapable of providing igniters with thedesired electrical properties for certain applications. Without wishingto be bound by any theory, it is believed that known processes haveinsufficiently coordinated the addition of nitrogen with the sinteringtemperature so that the recrystallization process is coordinated withthe supply of nitrogen to provide the required degree of nitrogenincorporation for certain igniter applications.

Thus, a need has arisen for method of making a hot surface igniter whichaddresses the foregoing.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flow chart depicting a method of making a hot surfaceigniter body;

FIG. 2 is a top plan view of a first example of a nitrogen-doped,silicon carbide, hot surface igniter;

FIG. 3A is a flow chart depicting a first method of making a siliconcarbide, hot surface igniter body by sintering an unsintered hot surfaceigniter body in a partially nitrogenated, reducing atmosphere toincorporate nitrogen into the silicon carbide lattice and increase theigniter body's oxidation resistance;

FIG. 3B is a flow chart depicting a particular implementation of thesintering steps of FIG. 3A;

FIG. 4 is a flow chart depicting a method of using ramps and soaks tosinter an unsintered silicon carbide, hot surface igniter body during afirst, relatively lower temperature, sintering period;

FIG. 5 is a flow chart depicting a method of using ramps and soaks tosinter an unsintered silicon carbide, hot surface igniter body during asecond, relatively higher temperature, sintering period;

FIG. 6 is a flow chart depicting a second method of making a siliconcarbide, hot surface igniter body by sintering an unsintered hot surfaceigniter body in a partially nitrogenated, reducing atmosphere;

FIG. 7 is a graph depicting temperature and time profiles for first andsecond sintering periods during the sintering of an unsintered hotsurface igniter body;

FIG. 8 is a flow chart depicting a third method of making a siliconcarbide, hot surface igniter body by sintering an unsintered hot surfaceigniter in a first, nitrogen depleted reducing atmosphere and in asecond, partially-nitrogenated reducing atmosphere;

FIG. 9 is a flow chart depicting a fourth method of making a siliconcarbide, hot surface igniter body by sintering an unsintered hot surfaceigniter body in a first, nitrogen depleted reducing atmosphere and in asecond, partially-nitrogenated reducing atmosphere;

FIG. 10 is a top plan view of a second example of a nitrogen-doped,silicon carbide igniter;

FIG. 11 is a flow chart depicting a fifth method of making a siliconcarbide, hot surface igniter body by sintering an unsintered hot surfaceigniter body in a first, nitrogen depleted reducing atmosphere and in asecond, partially-nitrogenated reducing atmosphere;

FIG. 12 is a graph depicting temperature and time profiles for first,second, and third sintering periods during the sintering of anunsintered hot surface igniter body in a first, nitrogen depletedreducing atmosphere and in a second, partially-nitrogenated reducingatmosphere; and

FIG. 13 is a top plan view of a third example of a nitrogen-doped,silicon carbide igniter.

DETAILED DESCRIPTION

Described below are examples of silicon carbide hot surface igniters andmethods of making silicon carbide, hot surface igniters. In accordancewith a first aspect, the igniter bodies comprise silicon carbide andhave a green (unsintered) density that is greater than 70 percent of atheoretical maximum density and a sintered density that differs from theunsintered density by no more than about five (5) percent, preferably nomore than about two (2) percent, and still preferably no more than aboutone (1) percent. The unsintered igniter bodies are subjected to asintering process, at least a portion of which is conducted in apartially-nitrogenated, reducing atmosphere. In general, the methodsdescribed herein include sintering steps with a relatively lowertemperature silicon carbide recrystallization phase and a relativelyhigher temperature silicon carbide recrystallization phase, and theintroduction of the partially-nitrogenated, reducing atmosphere iscoordinated with execution of these phases.

As used herein, the term “unsintered” refers to igniter bodies that havenot been subjected to sintering as well as to igniter bodies that haveonly been partially sintered. The term “reducing atmosphere” refers toan atmosphere that is substantially, and preferably completely, devoidof molecular oxygen (O₂). As used in reference to silicon carbide, thephrase “fines portion” refers to a portion of a silicon carbidecomposition in which a distribution of particle sizes is present, andthe D50 (median) particle size is from about 0.5 microns to about 10microns, preferably from about 1 micron to about 8 microns, and stillmore preferably from about 2 microns to about 5 microns. The finesportion has a surface area that is preferably from greater than 1 m²/gto about 10 m²/g, more preferably from about 2 m²/g to about 7 m²/g, andstill more preferably from about 4 m²/g to about 6 m²/g.

As used in reference to silicon carbide, the phrase “coarse portion”refers to a portion of a silicon carbide composition in which adistribution of particle sizes is present, and the D50 (median) particlesize is from about 50 microns to about 300 microns, preferably fromabout 80 microns to about 250 microns, and more preferably from about 90microns to about 200 microns. The coarse portion has a surface area thatis preferably less than 1 m²/g.

As used herein, the phrase “room temperature resistivity” refers to aresistivity at 25° C. Unless otherwise specified, as used herein, thephrase “high temperature resistivity” refers to a resistivity atapproximately 1000° C. Although other reference temperatures may beused.

In the discussion that follows, sintering processes are described ascomprising various sintering periods, e.g., a “first sintering period,”a “second sintering period,” etc. The terms “first sinteringtemperature,” “second sintering temperature,” etc. are used to indicatethat the sintering temperature is one that occurs during thecorresponding period. For example, the phrase “first sinteringtemperature” refers to a temperature that occurs during the “firstsintering period.” However, during a given sintering period, thesintering temperature associated with that sintering period may take onone or more values. Thus, the phrases “first sintering temperature,”“second sintering temperature,” etc. do not refer uniquely to a singletemperature value, but rather, to one or more temperature values thatmay be used during the corresponding sintering period. In general,during a given sintering period, the sintering furnace temperature willhave an initial temperature (e.g., T_(1i) for an initial temperatureduring a first sintering period) and a final temperature (e.g., T_(1f)for a final temperature during a first sintering period). The sinteringperiods may have a maximum temperature (e.g., T_(2max) for the maximumtemperature during the second sintering period) which is greater than orequal to the initial sintering temperature for the period (e.g., T_(2i)for the second sintering period initial temperature). During a sinteringperiod, the sintering temperature may be adjusted from the initial valueto the final value by using one or more ramps and one or more soaks. A“ramp” refers to a period during which the sintering temperature isprogressively increased, either linearly or non-linearly. A “soak”refers to period during which a sintering temperature is held at asubstantially constant or constant value. With respect to themeasurement of sintering temperatures described herein, at temperaturesabove about 1600° C., an optical pyrometer is the preferred way ofmeasuring temperature because certain thermocouples may break down atsuch temperatures. In addition, optical pyrometer readings may have somedegree of variability, e.g., 10° C. to 15° C., based on type, emissivitysetting, calibration, and siting target (location in the sinteringfurnace).

In accordance with a second aspect, a method of making a hot surfaceigniter is provided which comprises providing an unsintered hot surfaceigniter body comprising silicon carbide, wherein the silicon carbidecomprises a fines portion and a coarse portion, and the coarse portioncomprises at least about 20 percent by weight of the silicon carbide inthe unsintered hot surface igniter body.

The method in accordance with the second aspect further comprisessintering the unsintered hot surface igniter body in apartially-nitrogenated reducing atmosphere at one or more sinteringtemperatures ranging from about 2075° C. to about 2425° C., preferablyfrom about 2085° C. to about 2415° C., and more preferably from about2100° C. to about 2400° C. for a sintering period of from about 20minutes to about 2.5 hours, preferably from about 25 minutes to about2.25 hours, and more preferably from about 30 minutes to about 2 hours.In general, as the sintering furnace loading (i.e., the number ofigniter bodies) increases, it is preferable to increase the sinteringtime.

In accordance with the second aspect, the overall sintering period maybe subdivided into several sintering periods. Each sintering period hasa maximum sintering temperature that equals or exceeds a maximumsintering temperature from the preceding period and exceeds a minimumsintering temperature from the preceding period. In certain examples,the method in accordance with the second aspect further comprisessintering the unsintered hot surface igniter body in apartially-nitrogenated reducing atmosphere during a first sinteringperiod at a first sintering temperature that is at least about 1000° C.,preferably at least about 1050° C., and more preferably at least about1100° C. for a first sintering period that is from about 120 minutes toabout 180 minutes, preferably from about 140 minutes to about 170minutes, and more preferably from about 150 minutes to about 160minutes. The first sintering temperature during the first sinteringperiod is preferably no more than about 2520° C., more preferably nomore than about 2510° C., and still more preferably not more than about2500° C.

In certain examples, the first sintering period includes a subperiodduring which the first sintering temperature is at least about 2075° C.,preferably at least about 2085° C., and still more preferably at leastabout 2100° C. The subperiod is at least about 40 minutes, preferably atleast about 45 minutes, more preferably at least about 50 minutes.

During the first sintering period, the partially-nitrogenated reducingatmosphere comprises nitrogen gas in an amount ranging from about 20mole percent to about 80 mole percent of the reducing atmosphere. In oneexample, the reducing atmosphere during the first sintering periodcomprises nitrogen and a noble gas. In another example, the reducingatmosphere during the first sintering period consists essentially ofnitrogen and a noble gas. Helium and argon are preferred, and argon isthe most preferred noble gas. In a further example, the reducingatmosphere during the first sintering period comprises from about 25mole percent to about 60 mole percent nitrogen, and more preferably, thebalance is a noble gas, which is most preferably argon. In an additionalexample, the reducing atmosphere during the first sintering periodcomprises from about 30 mole percent to about 40 mole percent nitrogen,and more preferably, the balance is a noble gas, preferably argon.

The method in accordance with the second aspect further comprisessintering the unsintered hot surface igniter body in apartially-nitrogenated atmosphere (which may have the same compositionas the partially-nitrogenated atmosphere in the first sintering period)during a second sintering period at a second sintering temperature of atleast about 200° C., preferably at least about 250° C., and morepreferably at least about 300° C. In certain examples, the secondsintering temperature has a maximum value of no more than about 2550°C., preferably no more than about 2520° C., and still more preferably nomore than about 2500° C. The second sintering period is preferably atleast about 120 minutes, more preferably at least about 140 minutes, andstill more preferably at least about 150 minutes. In certainimplementations, the second sintering period includes a first subperiodduring which the second sintering temperature is at least about 2500° C.for a first subperiod of at least about 40 minutes, preferably at leastabout 50 minutes, and more preferably, at least about 60 minutes.

In accordance with methods of the first aspect and the second aspect, incertain examples, the silicon carbide used to form the hot surfaceigniter body includes a coarse portion and a fines portion, wherein thecoarse portion comprises at least about 20 percent by weight of thesilicon carbide, preferably at least about 30 percent by weight of thesilicon carbide, and even more preferably at least about 40 percent byweight of the silicon carbide. At the same time, the coarse portioncomprises no more than about 80 percent, more preferably no more thanabout 70 percent, and still more preferably no more than about 60percent by weight of the silicon carbide in the unsintered hot surfaceigniter body.

Hot surface igniter bodies prepared in accordance with methods of thefirst and second aspects preferably comprise silicon carbide, at leastone transition metal r, aluminum, and nitrogen. In preferred examples,hot surface igniter bodies prepared in accordance with methods of thefirst and second aspects consist essentially of silicon carbide,aluminum, at least one transition metal, and nitrogen. Trace amounts ofimpurities such as oxygen, vanadium, and chromium may also be present.The unsintered igniter bodies preferably include no added densificationaids, such as boron carbide, boron nitride, aluminum carbide, carbon,beryllium oxide, hafnium oxide, and yttrium oxide. The at least onetransition metal is preferably selected from the group consisting oftantalum (Ta), tungsten (W), molybdenum (Mo), zirconium (Zr), titanium(Ti), iron (Fe), and nickel (Ni). The at least one transition metal ispreferably added to a slurry used to form the hot surface igniter bodyas a transition metal silicide or a transition metal silicide formerselected from the group consisting of transition metal oxides, carbides,salts, and the transition metal itself. Suitable salts include nitrates.

In certain examples, the sintered hot surface igniter body has a siliconcarbide content of at least about 90 percent, more preferably at leastabout 95 percent, and still more preferably at least about 99 percent byweight of the sintered hot surface igniter body.

In the same or other examples, the sintered igniter body has an aluminumcontent of at least about 200 ppm, preferably at least about 300 ppm,more preferably at least about 400 ppm, and still more preferably atleast about 450 ppm. In the same or other examples, the sintered igniterbody has an aluminum content that is no greater than about 1000 ppm,preferably no greater than about 800 ppm, more preferably no greaterthan about 600 ppm, and still more preferably no greater than about 550ppm by weight of the sintered hot surface igniter body. The aluminum maybe present as aluminum compounds or as aluminum atoms incorporated inthe silicon carbide, but is believed to be the latter.

In the same or other examples, the sintered hot surface igniter body hasa transition metal content on an atomic basis of the at least onetransition metal of not more than about 1000 ppm, preferably not morethan about 750 ppm, and still preferably not more than about 500 ppm.The at least one transition metal is generally believed to be present asan at least one transition metal silicide compound at the siliconcarbide grain boundaries. However, the foregoing levels are based on thetransition metal atom, not on a compound that may be formed therefrom.

In the same or other examples, the sintered hot surface igniter body hasa nitrogen content of at least about 500 ppm, preferably at least about550 ppm, and still more preferably at least about 600 ppm by weight ofthe sintered hot surface igniter body. In the same or other examples,the sintered hot surface igniter body has a nitrogen content of no morethan about 1500 ppm, preferably no more than about 1300 ppm, and stillmore preferably no more than about 1000 ppm by weight of the sinteredhot surface igniter body.

Hot surface igniter bodies prepared in accordance with the first aspectand the second aspect preferably have a negative temperature coefficient(NTC) (i.e., a ratio of room temperature resistance to high temperatureresistance that is greater than 1.0). They may also preferably have aporosity that is greater than about seven (7) percent, more preferablygreater than about ten (10) percent, and still more preferably greaterthan about fifteen (15) percent. In certain implementations, hot surfaceigniter bodies prepared in accordance with the first and second aspecthave a green (unsintered) density that is greater than about 70 percentof a theoretical maximum density, preferably greater than about 75percent of a theoretical maximum density, and more preferably greaterthan about 80 percent of a theoretical maximum density. At the sametime, the green density is preferably no greater than about 90 percentof the theoretical maximum density, more preferably no greater thanabout 87 percent of the theoretical maximum density, and still morepreferably no greater than about 85 percent of the theoretical maximumdensity. At the same time hot surface igniters prepared in accordancewith methods of the second aspect may have a sintered density thatdiffers from the unsintered density by no more than about five (5)percent, preferably no more than about two (2) percent, and stillpreferably no more than about one (1) percent.

Hot surface igniter bodies prepared in accordance with the first aspectand the second aspect preferably have a room temperature resistivitythat is from about 0.2 ohm-cm to about 2.0 ohm-cm, more preferably fromabout 0.25 ohm-cm to about 1.0 ohm-cm, and still more preferably fromabout 0.3 ohm-cm to about 0.4 ohm-cm. Hot surface igniter bodiesprepared in accordance with the first aspect and the second aspectpreferably have a high temperature resistivity (i.e., resistivity at1000° C.) of from about 0.12 ohm-cm to about 0.25 ohm-cm, morepreferably from about 0.14 ohm-cm to about 0.20 ohm-cm, and still morepreferably from about 0.18 ohm-cm to about 0.19 ohm-cm. Hot surfaceigniter bodies prepared in accordance with the first and second aspectspreferably have a ratio of room temperature resistivity to hightemperature resistivity of from about 1.5 to about 2.5, preferably fromabout 1.7 to about 2.3, and more preferably from about 1.9 to about 2.1.

Equation (1) above relates resistivity to resistance, length, and areafor the case where the cross-sectional area perpendicular to currentflow is constant and does not vary with the position along the igniter'slength. In those cases where area is a function of the position alongthe length axis (L), the igniter body can be modeled as a series ofshort parts of constant cross-sectional area, each having its ownresistance, wherein the resistances are additive to define the overallresistance of the igniter body. Thus, equation (1) can be rewritten asfollows:

$\begin{matrix}{\rho = \frac{R}{\int_{0}^{L\; 1}\frac{d\; L}{A(L)}}} & (2)\end{matrix}$

-   -   where, p=resistivity (ohm-cm)        -   R=Total Resistance (ohms) along the length L1;        -   L=length (cm)        -   L1=length of igniter body from a first position along the            length axis to second position along the length axis;        -   A(L)=cross-sectional area (cm²) as a function of position            along length axis L.

Thus, in accordance with equation (2), resistivity may be determinedherein by measuring a resistance across an igniter body between twopoints that define two positions along the length (L) axis and thensolving equation (2) using a known relationship between area (A) andlength (L). Note that at certain igniter length axis positions, theigniter body defines a path for current flow that is in both thepositive and negative directions along the igniter body length axis L.However, the length (L) used in equation (2) is the total lengthtraveled along the length axis. Thus, if the igniter has a total lengthof 3 cm and two legs of the same length, L2 in equation (2) will be 6 cm(See FIGS. 10 and 13).

In accordance with a third aspect of the present disclosure, a hotsurface igniter body is provided which comprises a silicon carbidecomposition having a high temperature resistivity (i.e., at 1000° C.) offrom about 0.8 ohm-cm to about 3.5 ohm-cm, preferably from about 1ohm-cm to about 3 ohm-cm, and more preferably from about 2 ohm-cm toabout 2.5 ohm-cm. At the same time, the silicon carbide composition hasa room temperature resistivity of at least about 3 ohm-cm, preferably atleast about 3.5 ohm-cm, and more preferably at least about 4 ohm-cm. Thesilicon carbide composition has a room temperature resistivity of nomore than about 60 ohm-cm, preferably no more than about 40 ohm-cm, andstill more preferably no more than about 20 ohm-cm. The silicon carbidecomposition has a ratio of room temperature resistivity to hightemperature (1000° C.) resistivity that is from about 5 to about 20,preferably from about 8 to about 15, and more preferably from about 10to about 12. In preferred examples, the silicon carbide composition isessentially or completely free of transition metals and forms the distalpart of an igniter body, wherein the proximal part of the igniter bodycomprises silicon carbide and at least one transition metal.

In certain examples in accordance with the third aspect, the sinteredhot surface igniter body has a length along a length axis, and acomposition that varies along the length axis. In one implementation,the sintered hot surface igniter body has a first proximal region thathas a first composition and an adjacent distal region that has a secondcomposition. In certain variations of this implementation, the proximalregion of the sintered hot surface igniter body comprises first andsecond ends that are spaced apart from one another along a width axis,and the silicon carbide concentration in the distal region is greaterthan the silicon carbide concentration in the proximal region. Incertain cases, the proximal region comprises a material that is has arelatively lower resistivity than silicon carbide, and the distal regionis substantially devoid of the material. Suitable low resistivitymaterials include transition metals. Preferred transition metals includetantalum (Ta), tungsten (W), molybdenum (Mo), zirconium (Zr), titanium(Ti), iron (Fe), and nickel (Ni). In certain examples, molybdenum isespecially preferred. Without wishing to be bound by any theory, thetransition metal is believed to be present as a silicide of thetransition metal.

In the same or other examples of the third aspect, the relativelyresistive distal region of the sintered hot surface igniter has asilicon carbide content of at least about 90 percent, preferably atleast about 95 percent, and more preferably at least about 99 percent byweight of the distal region of the sintered hot surface igniter body. Inthe same or other examples, the relatively resistive distal region ofthe sintered hot surface igniter body has an aluminum content of atleast about 1000 ppm, preferably at least about 1500 ppm, morepreferably at least about 1800 ppm, and still more preferably at leastabout 1900 ppm by weight of the distal region of the sintered hotsurface igniter body. The aluminum may be present as an aluminumcompound or as aluminum atoms in the silicon carbide lattice, but isbelieved to be the latter. The foregoing aluminum levels are based onatomic aluminum. The relatively resistive distal region of sintered hotsurface igniter bodies prepared in accordance with the third aspect arepreferably free of or substantially free of transition metals. Traceamounts of transition metals may be present as impurities, but ironcompounds are not intentionally added during the fabrication process.

In certain exemplary methods of the third aspect, an unsintered, siliconcarbide igniter body is sintered in a partially-nitrogenated reducingatmosphere at one or more sintering temperatures that are at least about2400° C., preferably at least about 2425° C., and more preferably atleast about 2450° C. for a sintering period of at least about 10minutes, preferably at least about 12 minutes, and more preferably, atleast about 15 minutes. At the same time, the sintering period ispreferably no more than about 90 minutes, more preferably no more thanabout 80 minutes, and still more preferably no more than about 70minutes. In accordance with such exemplary methods, nitrogen ispreferably not introduced until a sintering temperature of at leastabout 2400° C., preferably at least about 2425° C., and more preferablyat least about 2450° C. is reached.

In the same or other exemplary methods, the unsintered, silicon carbideigniter body is further sintered in reducing atmosphere that is entirelyor substantially devoid of nitrogen for a sintering period of at leastabout 15 minutes, preferably at least about 20 minutes, and morepreferably, at least about 25 minutes, and which is no greater thanabout 60 minutes, preferably no greater than about 40 minutes, and stillmore preferably no greater than about 35 minutes.

The sintering process in accordance with the third aspect may comprisemultiple sintering periods. In certain examples, the unsintered igniterbody is sintered during a first sintering period in a first reducingatmosphere that is substantially devoid of nitrogen, followed by asecond sintering period in a second partially-nitrogenated reducingatmosphere. In certain examples, the first reducing atmosphere comprisesa noble gas, preferably helium and/or argon, and most preferably argon.In the same or other examples, the second reducing atmosphere comprisesnitrogen and a noble gas, preferably helium and/or argon, and morepreferably argon. In accordance with methods of the third aspect, theunsintered igniter body is also sintered during a third sintering periodin the second, partially-nitrogenated reducing atmosphere. Eachsintering period includes a maximum sintering temperature that exceedsthe minimum sintering temperature of the preceding periods. In certainexamples in accordance with the third aspect, the second reducingatmosphere comprises nitrogen in amount that is at least about 10 molepercent, more preferably at least about 15 mole percent, and still morepreferably at least about 20 mole percent of the reducing atmosphere,and even more preferably no more than about 25 mole percent of thereducing atmosphere. In accordance with such examples, nitrogen ispreferably present in an amount no greater than about 80 mole percent,more preferably no more than about 70 mole percent, still morepreferably no more than about 60 mole percent, and even more preferablyno more than about 50 mole percent of the reducing atmosphere. In thesame or other examples, the reducing atmosphere further comprises aninert gas other than nitrogen, such as a noble gas. Helium and argon arepreferred noble gases, and argon is especially preferred.

In accordance with a fourth aspect, a method of making a sintered hotsurface igniter is provided which comprises providing an unsinteredigniter body comprising a proximal region adjacent a distal region alonga length axis, wherein the proximal and distal regions comprise siliconcarbide. The method further comprises sintering the unsintered hotsurface igniter body to yield a sintered hot surface igniter body byusing a sintering method that comprises sintering the unsintered hotsurface igniter body in a first reducing atmosphere at a first sinteringtemperature for a first sintering period wherein the first reducingatmosphere is substantially devoid of nitrogen, and the first sinteringperiod is at least about 15 minutes, preferably at least about 20minutes, and more preferably at least about 25 minutes. The firstsintering period is at preferably no greater than about 60 minutes, morepreferably no greater than about 40 minutes, and still more preferablyno greater than about 35 minutes.

The method in accordance with the fourth aspect also comprises sinteringthe unsintered hot surface igniter body in a second reducing atmosphereat a second sintering temperature for a second sintering period, whereinthe second reducing atmosphere is partially nitrogenated, and the secondsintering temperature is at least about 2400° C., preferably at leastabout 2425° C., and more preferably at least about 2450° C. during thesecond sintering period. In preferred implementations of the fourthaspect, nitrogen is not introduced in the reducing atmosphere until thesintering temperature is at least about 2440° C., preferably at leastabout 2445° C., and more preferably at least about 2450° C.

In certain examples of the third and fourth aspects, the distal regionof the sintered hot surface igniter body has a nitrogen content of atleast about 100 ppm, preferably at least about 200 ppm, and still morepreferably at least about 300 ppm by weight of the sintered hot surfaceigniter body. In the same or other examples the distal region of thesintered hot surface igniter body has a nitrogen content of no more thanabout 600 ppm, preferably no more than about 550 ppm, and still morepreferably no more than about 500 ppm by weight of the distal region ofthe hot surface igniter body.

In additional examples of the third and fourth aspects, the distalregion of the hot surface igniter body comprises silicon carbide and issubstantially, or preferably completely, devoid of transition metals,while the proximal region comprises both silicon carbide and at leastone transition metal. In preferred examples, the transition metals inthe proximal region of the hot surface igniter body are present (on anatomic basis of the transition metal) in an amount ranging from about1.3 percent to about thirteen (13) percent by weight of the proximalregion of the hot surface igniter body. In more preferred examples, theamount of the at least one transition metal in the proximal region is atfrom about 1.9 percent to about 9.5 percent, and more preferably fromabout 3.2 percent to about 6.3 percent by weight of the proximal regionof the hot surface igniter body. Without wishing to be bound by anytheory, it is believed that the at least one transition metal is presentas at least one transition metal silicide, and in preferred examples,the amount of the at least one transition metal silicides (based on thetransition metal silicide compound) in the proximal region is from about3 percent to about 15 percent, and more preferably from about five (5)percent to about ten (10) percent by weight of the proximal region ofthe hot surface igniter body.

In the same or other examples, the amount of silicon carbide in theproximal region is at least about 87 percent, preferably at least about93 percent, and even more preferably at least about 98 percent by weightof the proximal region. In the same or other examples, the amount ofaluminum (on an aluminum atomic basis) in the proximal region is atleast about 1000 ppm, preferably at least about 1500 ppm, morepreferably at least about 1800 ppm, and still more preferably at leastabout 1900 ppm by weight of the proximal region of the hot surfaceigniter body.

When the distal and proximal regions of the hot surface igniter body areexposed to the same nitrogenated atmosphere for the same amount of timeand at the same temperatures, they will typically have similar orsubstantially identical concentrations of nitrogen. However, withoutwishing to be bound by any theory, it is believed that when bothnitrogen and at least one transition metal silicide or transition metalsilicide former are used to form the proximal region, the amount ofnitrogen in the proximal region is not critical to the electricalperformance if the igniter. In certain examples, the amount of nitrogenin the proximal region of the hot surface igniter body is at least about100 ppm, preferably at least about 350 ppm, and still more preferably atleast about 400 ppm of the proximal region of the hot surface igniterbody, and the amount of nitrogen in the proximal region is no more thanabout 1000 ppm, preferably no more than about 650 ppm, and stillpreferably no more than about 600 ppm by weight of the proximal regionof the hot surfaced igniter body.

Igniter bodies prepared in accordance with the third and fourth aspectsmay have more than two zones, any or all of which may includeconcentration gradients of one or more constituents along a portion ofthe zone.

Referring to FIG. 2, a hot surface igniter 20 is depicted whichcomprises a sintered hot surface igniter body 22 and a terminal block24. The sintered hot surface igniter body 22 is a ceramic structure thatheats up as a voltage is provided across the proximal leg ends 56 and58, which are in electrical communication with conductors 26 a and 26 b.The conductors 26 a and 26 b are connected to opposite terminals of avoltage source (not shown). Portions of the proximal leg ends 56 and 58which extend into the terminal block 24 are arc sprayed with a nickelalloy to facilitate electrical connection to conductors 26 a and 26 b.

The terminal block 24 is an insulating material, such as alumina,cordierite, and steatite, inside of which the conductors 26 a and 26 bare electrically connected to the proximal leg ends 56 a and 56 b of thehot surface igniter body. Slots 40, 42, and 43 are cut along the lengthaxis L of the hot surface igniter body 22 to define legs 32, 34, 36 and38. The legs 32, 34, 36, and 38 are elongated areas of reducedcross-sectional area which provide concentrated sections of resistanceheating by providing areas of increased resistance in accordance withequation (1), above.

Referring to FIG. 1, an overall process for manufacturing a siliconcarbide, hot surface igniter is depicted. Additional steps may beincluded. The steps in the figure are intended to provide a generaldescription of the overall process. In accordance with the method, instep 1002 a mold is created with a mold cavity having a shapecorresponding to a plurality of hot surface igniter bodies. Suitablemold materials include plaster of Paris. The mold is used to form abillet, which is an unsintered block of ceramic material from whichindividual igniter bodies are cut. In step 1004, the billet is cast. Inthis step, the materials used to form the silicon carbide igniter areformed into a moldable, aqueous slurry and poured into the mold cavity.In accordance with one example, silicon carbide powder is combined withaluminum oxide, at least one transition metal silicide or transitionmetal silicide former, a latex binder, and water to form an aqueousslurry. The at least one transition metal in the at least one transitionmetal silicide or transition metal silicide former is preferablyselected from the group consisting of tantalum (Ta), tungsten (W),molybdenum (Mo), zirconium (Zr), titanium (Ti), iron (Fe), and nickel(Ni). Suitable transition metal silicide formers are preferably selectedfrom the group consisting of transition metal oxides, carbides, salts,and the transition metal itself. Suitable salts include nitrates.

The amounts of silicon carbide, aluminum oxide, and the at least onetransition metal silicide or transition metal silicide former areselected to achieve desired levels (described above) of silicon carbide,aluminum (as atomic aluminum or a compound comprising aluminum), and atleast one transition metal (as the atomic transition metal or a compoundformed therefrom) in the sintered hot surface igniter body. The water isremoved during an air curing step (1004), and the latex binder is burnedoff during sintering (step 1010). The aluminum in the aluminum oxide isbelieved to be incorporated as atomic aluminum in the silicon carbidelattice, and the at least one transition metal is believed to be presentas a transition metal silicide compound at the grain boundaries of thesilicon carbide.

A notching process is performed in step 1006. In this step, a section ofmaterial is removed along the length of the billet (which corresponds tothe thickness dimension of the igniter body) to create two spaced apartsections that will ultimately define the proximal end of the igniterbodies. In FIG. 2, the proximal end comprises proximal leg ends 56 and58, which are spaced apart along the width axis of the igniter. Thisspacing is initially created by notching the billet. In FIG. 2, thenotched area is the rectangular region identified as 47.

In step 1008, the billet is sliced along its width axis at intervalsalong its length to create individual, unsintered igniter bodies. Thebillet length axis intervals define the thickness dimension of eachigniter body. The unsintered igniter bodies are then loaded into asintering furnace and subjected to varying sintering temperatures duringvarying sintering periods in a reducing atmosphere. Specific sinteringmethods will be described in greater detail below.

Following the sintering process, the sintered igniter bodies are slottedalong their lengths to create slots such as slots 40, 42, and 43 in FIG.2. The slotting process defines the length and cross-sectional area ofthe heating path through the igniter body. For a sintered igniter bodyformed from a given material, the resistivity will be fixed. However, inaccordance with equation (1), the length and cross-sectional area ofregions of the igniter body will determine the level of resistiveheating that the igniter will generate when subjected to a given voltageat a given temperature. Thus, the slotting process can be used to adjustthe heating ability of individual igniters or batches of igniters tomeet desired specifications for a heating application of interest. Inone example, a room temperature resistance specification is set for eachigniter, and one or more slots are cut to a specific length along thelength axis of the igniter. The room temperature resistance is thenmeasured and compared to the specification. If the measured resistanceis too low, the slot is lengthened to increase the region of resistanceheating on the igniter body. In another example, side slots 40 and 43are cut to a fixed length, and the length of center slot 42 is adjustedto achieve a desired overall igniter body resistance. The slottedigniters are arc sprayed with nickel in a region of proximal ends 56 and58 that is not visible in FIG. 2. The proximal ends 56 and 58 are thenconnected to respective terminal blocks 24 (FIG. 2) and electricallyconnected to conductors 26 a and 26 b therein.

Referring to FIG. 3A, a flow chart depicting a method of making asilicon carbide, hot surface igniter is depicted. The method of FIG. 3Autilizes a sintering process in which an unsintered, silicon carbide hotsurface igniter is sintered in a partially-nitrogenated, reducingatmosphere. In preferred examples, the method of FIG. 3A is carried outin a manner that controls the amount of nitrogen incorporated into thesilicon carbide lattice.

Referring to the method, in step 1016 an aqueous slurry is preparedwhich comprises silicon carbide, a latex binder, and water. In preferredexamples, the slurry also includes aluminum oxide and/or at least onetransition metal silicide or at least one transition metal silicideformer. The transition metal in the at least one transition metalsilicide or transition metal silicide former is preferably selected fromthe group consisting of tantalum (Ta), tungsten (W), molybdenum (Mo),zirconium (Zr), titanium (Ti), iron (Fe), and nickel (Ni). Suitabletransition metal formers are preferably selected from the groupconsisting of oxides, carbides, salts, and the transition metal itself.Suitable salts include nitrates. The amount of silicon carbide added tothe slurry is preferably selected to achieve a content of siliconcarbide in the sintered hot surface igniter body which exceeds 90percent, more preferably exceeds 95 percent, and still more preferablyexceeds 99 percent by weight of the sintered, hot surface igniter body.

When aluminum oxide is present, it is preferably added in an amountsufficient to provide an aluminum content (on an aluminum atomic basis)in the sintered hot surface igniter body which is at least about 200ppm, preferably at least about 300 ppm, more preferably at least about400 ppm, and still more preferably at least about 450 ppm. In the sameor other examples, the sintered igniter body has an aluminum content (onan aluminum atomic basis) that is no greater than about 1000 ppm,preferably no greater than about 800 ppm, more preferably no greaterthan about 600 ppm, and still more preferably no greater than about 550ppm by weight of the sintered hot surface igniter body. The aluminum inthe sintered hot surface igniter may be present as aluminum atomsincorporated into the silicon carbide lattice or as an aluminumcompound. However, aluminum atoms are typically incorporated into thesilicon carbide lattice.

When at least one transition metal silicide or transition metal silicideformer is present in the slurry of step 1016, it is preferably added inan amount sufficient to provide an amount of the at least one transitionmetal (on an atomic basis) in the sintered hot surface igniter body ofnot more than about 1000 ppm, preferably not more than about 750 ppm,and still preferably not more than about 500 ppm. The at least onetransition metal is generally believed to be present as a silicidecompound at the silicon carbide grain boundaries. However, the foregoinglevels are on an atomic basis of the at least one transition metal.

The silicon carbide added to the aqueous slurry preferably comprises acoarse portion and a fines portion. The coarse portion preferablycomprises at least about 20 percent, more preferably at least about 30percent, and still more preferably at least about 40 percent by weightof the silicon carbide in the aqueous slurry. The coarse portionpreferably comprises no more than 80 percent, more preferably no morethan about 70 percent, and still more preferably no more than about 60percent by weight of the silicon carbide in the aqueous slurry. Theslurry is molded and air cured to create a billet in step 1018. Afternotching, the billet is sliced into individual, green (unsintered)igniter bodies in step 1020, which are then loaded into a sinteringfurnace (step 1022). The green igniter bodies preferably have a densitythat is at least about 70 percent, preferably at least about 75 percent,and more preferably at least about 80 percent of the theoretical maximumdensity. At the same time, the green igniter bodies preferably have adensity that is no greater than about 90 percent of the theoreticalmaximum density, more preferably no greater than about 87 percent of thetheoretical maximum density, and still more preferably no greater thanabout 85 percent of the theoretical maximum density.

The sintering process of the method of FIG. 3A comprises two sinteringsteps 1023 and 1025. Each is carried out in a reducing atmosphere thatis partially, but preferably not wholly, nitrogenated (i.e., theatmosphere in the sintering furnace is less than 100 mole percentnitrogen).

The first sintering step (1023) is a relatively lower temperaturesintering step, and the second sintering step (1025) is a relativelyhigher temperature sintering step. The word “relatively” refers to thefact that the maximum temperature in step 1025 is greater than or equalto the maximum temperature in step 1023, and the maximum temperature instep 1025 is greater than the minimum temperature in step 1023. Withoutwishing to be bound by any theory, it is believed that during therelatively lower temperature sintering step 1023, the fines portion ofthe silicon carbide vaporizes and recrystallizes such that some amountof the nitrogen in the partially-nitrogenated reducing atmosphere isincorporated into the recrystallized silicon carbide lattice, therebyproviding an n-doped silicon carbide lattice with enhanced electricalproperties.

The second sintering step (1025) is relatively higher temperaturesintering step. Without wishing to be bound by any theory, it isbelieved that during this step, recrystallization of silicon carbidecontinues, but with relatively less incorporation of nitrogen into thesilicon carbide lattice. This step increases the oxidation resistance ofthe igniter body.

The method of FIG. 3A yields a sintered, hot surface silicon carbideigniter body that comprises nitrogen. The nitrogen content is preferablyfrom at least about 500 ppm, preferably at least about 550 ppm, andstill more preferably at least about 600 ppm by weight of the sinteredhot surface igniter body. In the same or other examples, the sinteredhot surface igniter body has a nitrogen content of no more than about1500 ppm, preferably no more than about 1300 ppm, and still morepreferably no more than about 1000 ppm by weight of the sintered hotsurface igniter body.

In preferred examples, the sintered igniter body has a negativetemperature coefficient. In the same or other examples, the sinteredigniter body has a density that differs from the igniter body's greendensity by no more than about five (5) percent, preferably no more thanabout two (2) percent, and still preferably no more than about one (1)percent. In the same or other examples, the sintered igniter bodyconsists essentially of silicon carbide, at least one transition metal(which may be present as at least one transition metal silicidecompound), aluminum, and nitrogen, although trace levels of oxygen,chromium, and vanadium may be present as impurities. In the same orother examples, the sintered igniter body has a porosity that is greaterthan about seven (7) percent, more preferably greater than about ten(10) percent, and still more preferably greater than about fifteen (15)percent. Igniters prepared in accordance with the method of FIG. 3Apreferably have a room temperature resistivity that is from about 0.2ohm-cm to about 2.0 ohm-cm, more preferably from about 0.25 ohm-cm toabout 1.0 ohm-cm, and still more preferably from about 0.3 ohm-cm toabout 0.4 ohm-cm. Hot surface igniter bodies prepared in accordance withthe method of FIG. 3A preferably have a high temperature resistivity(i.e., resistivity at 1000° C.) of from about 0.12 ohm-cm to about 0.25ohm-cm, more preferably from about 0.14 ohm-cm to about 0.20 ohm-cm, andstill more preferably from about 0.18 ohm-cm to about 0.19 ohm-cm. Hotsurface igniter bodies prepared in accordance with the method of FIG. 3Apreferably have a ratio of room temperature resistivity to hightemperature resistivity of from about 1.5 to about 2.5, preferably fromabout 1.7 to about 2.3, and more preferably from about 1.9 to about 2.1.

In certain preferred examples, the method of FIG. 3A is carried outwithout using any added densification aids. As used herein, the term“densification” aid refers to a material that aids in increasing thedensity of silicon carbide during sintering. The excluded densificationaids include boron carbide, boron nitride, aluminum carbide, carbon,beryllium oxide, hafnium oxide, and yttrium oxide.

FIG. 3B depicts a particular implementation of the sintering steps 1023and 1025 of FIG. 3A. In preferred examples, the first sintering step1024 is carried out at a variable first sintering temperature comprisingone or more first temperature values during a first sintering period.The beginning of the first sintering period of step 1024 occurs when thepartially-nitrogenated reducing atmosphere is introduced to thesintering furnace.

In preferred examples, step 1024 is carried out in apartially-nitrogenated reducing atmosphere at one or more sinteringtemperatures ranging from about 2075° C. to about 2425° C., preferablyfrom about 2085° C. to about 2415° C., and more preferably from about2100° C. to about 2400° C. for a sintering period of from about 20minutes to about 2.5 hours, preferably from about 25 minutes to about2.25 hours, and more preferably from about 30 minutes to about 2 hours.In general, as the sintering furnace loading (i.e., the number ofigniter bodies) increases, it is preferable to increase the sinteringtime, flow rate, and/or level of nitrogen in the gas mixture.

In the same or other examples, step 1024 is carried out during a firstsintering period at al first sintering temperature that is at leastabout 850° C., preferably at least about 950° C., and more preferably atleast about 1050° C. for a first sintering period that is from about 100minutes to about 200 minutes, preferably from about 120 minutes to about180 minutes, and more preferably from about 140 minutes to about 160minutes. The first sintering temperature during the first sinteringperiod is preferably no more than about 2520° C., more preferably nomore than about 2510° C., and still more preferably not more than about2500° C. Without wishing to be bound by any theory or limit the scope ofthe claims in any way, it is believed that operating in the foregoingtemperature range for the foregoing period of time beneficially promotesrecrystallization of silicon carbide fines and the incorporation ofnitrogen from the partially-nitrogenated reducing atmosphere into therecrystallized silicon carbide lattice.

In certain examples, the first sintering period in step 1024 includes asubperiod during which the first sintering temperature is at least about2100° C. The subperiod is at least about 40 minutes, preferably at leastabout 45 minutes, more preferably at least about 50 minutes. At the sametime, the first subperiod is no more than about 70 minutes, preferablyno more than about 65 minutes, more preferably no more than about 60minutes.

In certain implementations of step 1024, during the first sinteringperiod there is preferably a second subperiod (in lieu of or in additionto the first subperiod) during which the first sintering temperature isat least about 2300° C. for a second subperiod of at least about 10minutes, preferably at least about 15 minutes, and more preferably atleast about 20 minutes. During the second subperiod, the first sinteringtemperature is preferably no more than about 2520° C., more preferablyno more than about 2510° C. and still more preferably no more than about2500° C.

In certain implementations, the first sintering period includes a thirdsubperiod in lieu of either or both or in addition to the first andsubperiods during which the first sintering temperature is at leastabout 2350° C. for a second subperiod of at least about 7 minutes,preferably at least about 10 minutes, and more preferably at least about15 minutes. During the third subperiod, the first sintering temperatureis preferably no more than about 2520° C., more preferably no more thanabout 2510° C. and still more preferably no more than about 2500° C.

In additional implementations, the first sintering period includes afourth subperiod in addition to or in lieu of any or all of the first,second, and third subperiods during which the first sinteringtemperature is at least about 2400° C. for a fourth subperiod of atleast about 5 minutes, preferably at least about 7 minutes, and morepreferably at least about 10 minutes. During the fourth subperiod, thefirst sintering temperature is preferably no more than about 2520° C.,more preferably no more than about 2510° C. and still more preferably nomore than about 2500° C.

In FIG. 7, T₁ represents the variable sintering temperature during thefirst sintering period. As indicated in the figure, T_(1i) representsthe initial sintering temperature in the first sintering period, andT_(1f) represents the final sintering temperature in the first sinteringperiod, which coincides with the second sintering period initialtemperature T_(2i).

As shown in FIG. 4, the first sintering period may comprise one or moretemperature soaks (step 1028) and one or more temperature ramps (step1030), each occurring for a specified period of time within the firstsintering period. In one example, one or more soaks are performed at atemperature ranging from about 2000° C. to about 2200° C. for a totalsoak period of at least about 2 minutes, preferably at least about 4minutes, and still more preferably at least about 5 minutes. Within thisrange, soak temperatures ranging from about 2050° C. to about 2150° C.are more preferred, and soak temperatures ranging from about 2090° C. toabout 2110° C. are even more preferred.

As shown in step 1030 of FIG. 4, in certain implementations, the firstsintering period includes one or more temperature ramps which may occurbetween temperature soaks. When multiple temperature ramps are used, itis understood that there is no overlap in the temperature values duringdifferent temperature ramps (except that when one ramp transitionsimmediately into another, the final temperature of the earlier ramp mayequal the initial temperature of the later ramp) and that whensequential ramps are used, their respective ramp temperature increase astime progresses during the first sintering period.

In one implementation, the one or more ramps include a first temperatureramp that is carried out during the first sintering period from a firstramp initial temperature that ranges from about 1000° C. to about 1200°C., preferably from about 1050° C. to about 1150° C., and morepreferably from about 1090° C. to about 1110° C. until a final ramptemperature is reached. In accordance with the one implementation, thefirst ramp final temperature ranges from about 2000° C. to about 2200°C., preferably from about 2050° C. to about 2150° C., and morepreferably from about 2090° C. to about 2110° C. The first ramp timeranges from about 60 minutes to about 140 minutes, preferably from about80 minutes to about 120 minutes, and still more preferably from about 90minutes to about 110 minutes.

In certain implementations, the one or more ramps include a secondtemperature ramp carried out in lieu of or in addition to the firstramp. The second temperature ramp is preferably carried out during thefirst sintering period from a second ramp initial temperature thatranges from about 2000° C. to about 2200° C., preferably from about2050° C. to about 2150° C., and more preferably from about 2090° C. toabout 2110° C. The second ramp final temperature is preferably at leastabout 2480° C., more preferably at least about 2490° C., and morepreferably at least about 2495° C. The second ramp final temperature isno more than about 2520° C., preferably no more than about 2510° C. andstill more preferably no more than about 2505° C. The second ramp timepreferably ranges from about 30 minutes to about 70 minutes, morepreferably from about 40 minutes to about 60 minutes, and still morepreferably from about 45 minutes to about 55 minutes.

In the method of FIG. 3B, the first reducing atmosphere preferablycomprises nitrogen in amount that is at least about 10 mole percent,more preferably at least about 15 mole percent, and still morepreferably at least about 20 mole percent of the reducing atmosphere,and even more preferably at least about 25 mole percent of the reducingatmosphere. Nitrogen is preferably present in an amount no greater thanabout 80 mole percent, more preferably no more than about 70 molepercent, still more preferably no more than about 60 mole percent, andeven more preferably no more than about 50 mole percent of the reducingatmosphere. In the same or other examples, the reducing atmospherefurther comprises an inert gas other than nitrogen, such as noble gas.Helium and argon are preferred noble gases, and argon is especiallypreferred.

Step 1026 in FIG. 3B is carried out in a second reducing atmosphere at asecond reducing temperature that may have one or more second temperaturevalues for a second sintering period. The second reducing atmosphere mayhave a partially-nitrogenated composition of the type described abovefor the first reducing atmosphere. In certain implementations, thesecond reducing atmosphere has substantially the same or the samecomposition as the first reducing atmosphere.

Step 1026 comprises sintering the unsintered hot surface igniter body ina partially-nitrogenated atmosphere (which may have the same compositionas the partially-nitrogenated atmosphere in the first sintering period)during a second sintering period at second sintering temperature of atleast about 200° C., preferably at least about 250° C., and morepreferably at least about 300° C. The second sintering temperature has amaximum value of not more than about 2550° C., preferably not more thanabout 2520° C., and still more preferably not more than about 2500° C.The second sintering period is preferably at least about 100 minutes,more preferably at least about 120 minutes, and still more preferably atleast about 140 minutes. The second sintering period is preferably nomore than about 220 minutes, preferably no more than about 200 minutes,and still more preferably no more than about 180 minutes.

In certain implementations, the second sintering period includes a firstsubperiod during which the second sintering temperature is at leastabout 2500° C. for a first subperiod of at least about 40 minutes,preferably at least about 50 minutes, and more preferably, at leastabout 60 minutes.

The final value of the second sintering temperature is defined by thecessation of the gas flow that provides a reducing atmosphere (e.g.,nitrogen and argon). In certain examples, the final value of the secondsintering temperature ranges from about 200° C. to about 500° C.,preferably from about 250° C. to about 400° C., and more preferably fromabout 300° C. to about 350° C.

As shown in FIG. 5, the second sintering period may comprise one or moretemperature soaks (step 1028) and one or more temperature ramps (step1030). In certain examples, the second sintering period includes a firsttemperature soak at a first soak temperature ranging from about 2480° C.to about 2520° C., preferably from about 2490° C. to about 2510° C., andstill more preferably from about 2495° C. to about 2505° C. The firsttemperature soak period in the second sintering period is preferablyfrom about 30 minutes to about 90 minutes, more preferably from about 40minutes to about 80 minutes, and still more preferably from about 55minutes to about 65 minutes.

The second sintering period may also comprise one or more temperatureramps (step 1030). In one example, the second sintering period includesa cool down period initiated with a temperature ramp. The ramp initialtemperature preferably ranges from about 2480° C. to about 2520° C.,more preferably from about 2490° C. to about 2510° C., and still morepreferably from about 2495° C. to about 2505° C. The second ramp finaltemperature preferably ranges from about 1600° C. to about 2000° C.,more preferably from about 1700° C. to about 1900° C., and still morepreferably from about 1750° C. to about 1850° C. The second ramp time ispreferably from about 50 minutes to about 90 minutes, more preferablyfrom about 60 minutes to about 80 minutes, and still more preferablyfrom about 65 minutes to about 75 minutes.

The methods of FIGS. 3B, 4 and 5 yield a sintered, hot surface siliconcarbide igniter body that comprises nitrogen. The nitrogen content ispreferably from at least about 500 ppm, preferably at least about 550ppm, and still more preferably at least about 600 ppm by weight of thesintered hot surface igniter body. In the same or other examples, thesintered hot surface igniter body has a nitrogen content of no more thanabout 1500 ppm, preferably no more than about 1300 ppm, and still morepreferably no more than about 1000 ppm by weight of the sintered hotsurface igniter body.

In preferred examples, the sintered igniter body has a negativetemperature coefficient. In the same or other examples, the sinteredigniter body has a density that differs from the igniter body's greendensity by no more than about five (5) percent, preferably no more thanabout two (2) percent, and still preferably no more than about one (1)percent. In the same or other examples, the sintered igniter bodyconsists essentially of silicon carbide, at least one transition metal(which may be present as a transition metal silicide), aluminum, andnitrogen, although trace levels of oxygen, chromium, and vanadium may bepresent as impurities. In the same or other examples, the sinteredigniter body has a porosity that is greater than about seven (7)percent, more preferably greater than about ten (10) percent, and stillmore preferably greater than about fifteen (15) percent. Ignitersprepared in accordance with the method of FIG. 3 preferably have a roomtemperature resistivity that is from about 0.2 ohm-cm to about 2.0ohm-cm, more preferably from about 0.25 ohm-cm to about 1.0 ohm-cm, andstill more preferably from about 0.3 ohm-cm to about 0.4 ohm-cm. Hotsurface igniter bodies prepared in accordance with the methods of FIG.3B, 4, or 5 preferably have a high temperature resistivity (i.e.,resistivity at 1000° C.) of from about 0.12 ohm-cm to about 0.25 ohm-cm,more preferably from about 0.14 ohm-cm to about 0.20 ohm-cm, and stillmore preferably from about 0.18 ohm-cm to about 0.19 ohm-cm. Hot surfaceigniter bodies prepared in accordance with the method of FIG. 3B, 4, or5 preferably have a ratio of room temperature resistivity to hightemperature resistivity of from about 1.5 to about 2.5, preferably fromabout 1.7 to about 2.3, and more preferably from about 1.9 to about 2.1.

Referring to FIG. 6, another exemplary method of making a siliconcarbide, hot surface igniter is depicted. The method of FIG. 6 comprisesa method of sintering an unsintered hot surface igniter body in apartially-nitrogenated, reducing atmosphere. In accordance with themethod, a plurality of green (unsintered) hot surface silicon carbideigniter bodies are loaded into a sintering furnace. In certain preferredexamples, the method of FIG. 6 is carried out without using anydensification aids. The excluded densification aids include boroncarbide, boron nitride, aluminum carbide, carbon, beryllium oxide,hafnium oxide, and yttrium oxide. The unsintered igniter bodies that aresintered using the method of FIG. 6 preferably have a green density thatis greater than about 70 percent of a theoretical maximum density,preferably greater than about 75 percent of a theoretical maximumdensity, and more preferably greater than about 80 percent of atheoretical maximum density. At the same time, the green density ispreferably no greater than about 90 percent of the theoretical maximumdensity, more preferably no greater than about 87 percent of thetheoretical maximum density, and still more preferably no greater thanabout 85 percent of the theoretical maximum density.

The unsintered igniter bodies preferably comprise silicon carbide, atleast one transition metal silicide or transition metal silicide former,aluminum oxide, and some residual amount of latex binder following anair curing process. The amounts of silicon carbide, aluminum oxide, andthe at least one transition metal silicide or transition metal silicideformer are preferably selected to provide the amounts of siliconcarbide, at least one transition metal and aluminum in the sinteredigniter which are described previously. In certain examples, theunsintered igniter bodies preferably consist essentially of siliconcarbide, at least one transition metal silicide or transition metalsilicide former, aluminum oxide, and some amount of latex binder, withthe amounts of silicon carbide, aluminum oxide, and the at least onetransition metal silicide or transition metal silicide former beingthose specified previously. The at least one transition metal in the atleast one transition metal silicide or transition metal silicide formeris preferably selected from the group consisting of tantalum (Ta),tungsten (W), molybdenum (Mo), zirconium (Zr), titanium (Ti), iron (Fe),and nickel (Ni). Suitable transition metal silicide formers arepreferably selected from the group consisting of transition metaloxides, carbides, salts, and the transition metal itself. Suitable saltsinclude nitrates.

In step 1032, a vacuum system operatively connected to the interior ofthe furnace is activated to purge air and reduce the air pressure to avalue of from about 5 microns of mercury (relative to vacuum) to about50 microns, preferably from about 10 microns to about 20 microns, andmore preferably from about 14 microns to about 16 microns.

In step 1034, the sintering furnace heating element is energized tobegin ramping the temperature in the interior of the furnace from roomtemperature to an initial reducing atmosphere sintering temperatureT_(1i) (FIG. 7). The initial reducing atmosphere sintering temperatureT_(1i) is from about 1000° C. to about 1200° C., preferably from about1050° C. to about 1150° C., and more preferably from about 1090° C. toabout 1110° C. During this period, the gases used to provide apartially-nitrogenated reducing atmosphere have not yet been introducedinto the sintering furnace, and the interior of the furnace is operatingat the sub-atmospheric pressure established in step 1032. The ramp timeduring step 1034 ranges from about 50 minutes to about 90 minutes,preferably from about 60 minutes to about 80 minutes, and still morepreferably from about 65 minutes to about 75 minutes.

A reducing atmosphere is provided in the interior of the sinteringfurnace in step 1036 to initiate the first sintering period. Thereducing atmosphere is partially, but not wholly, nitrogenated. Inaccordance with the step, a flow of nitrogen and a non-nitrogen inertgas into the sintering furnace is initiated. In preferred examples, theflow of gas is adjusted to provide a pressure in the interior of thesintering furnace that is near atmospheric. The pressure preferablyranges from about 12 psia to about 18 psia, more preferably from about13 psia to about 17 psia, and still more preferably from about 15 psiato about 16 psia (i.e., from about 0.3 psig to about 1.3 psig). Thepartially-nitrogenated reducing atmosphere preferably comprises nitrogenin amount that is at least about 10 mole percent, more preferably atleast about 15 mole percent, and still more preferably at least about 20mole percent of the reducing atmosphere, and even more preferably atleast about 25 mole percent of the reducing atmosphere. Nitrogen ispreferably present in an amount no greater than about 80 mole percent,more preferably no more than about 70 mole percent, still morepreferably no more than about 60 mole percent, and even more preferablyno more than about 50 mole percent of the reducing atmosphere. In thesame or other examples, the reducing atmosphere further comprises aninert gas other than nitrogen, such as helium or argon. Argon isespecially preferred.

In step 1038, the first sintering temperature is ramped from its initialvalue of T_(1i) to a first reducing atmosphere soak temperatureT_(RA Soak 1) during a first reducing atmosphere ramp period. The firstreducing atmosphere soak temperature T_(RA Soak 1) ranges from about2000° C. to about 2200° C. Within this range, first reducing atmospheresoak temperatures ranging from about 2050° C. to about 2150° C. are morepreferred, and first reducing atmosphere soak temperatures ranging fromabout 2090° C. to about 2110° C. are even more preferred.

In step 1040 a soak is carried out at the first reducing atmosphere soaktemperature T_(RA Soak 1) for a total soak period of at least about 2minutes, preferably at least about 4 minutes, and still more preferablyat least about 5 minutes. The soak period for step 1040 is preferably nomore than about 30 minutes, more preferably no more than about 20minutes, and still more preferably no more than about 15 minutes.

In step 1042, the first sintering temperature is ramped in a secondreducing atmosphere temperature ramp from the previous soak temperatureT_(RA Soak 1) to a next reducing atmosphere soak temperatureT_(RA Soak 2). The second reducing atmosphere soak temperatureT_(RA Soak 2) is preferably at least about 2480° C., more preferably atleast about 2490° C., and more preferably at least about 2495° C. Thesecond reducing atmosphere soak temperature is no more than about 2550°C., preferably no more than about 2520° C. and still more preferably nomore than about 2500° C.

In step 1044, the first sintering period ends, and the second sinteringperiod begins. Referring to FIG. 7, the second soak temperatureT_(RA Soak 2) is the final temperature of the first sintering period(T_(1f)) and the initial temperature of the second soak period (T_(2i)).Without wishing to be bound by any theory, it is believed that asintering temperature having a value at or above the preferred ranges ofT_(RA Soak 2) transitions the process from one in which incorporation ofnitrogen into the silicon lattice is dominant to one in which theincorporation is significantly reduced, and the igniter body developsenhanced oxidation resistance.

In step 1046 the second soak is preferably carried out for a second soakperiod of at least about 40 minutes, preferably at least about 50minutes, and more preferably at least about 55 minutes. The second soakperiod is preferably no more than about 90 minutes, more preferably nomore than about 80 minutes, and still more preferably no more than about70 minutes. At higher furnace loadings (i.e., higher numbers of igniterbodies), increased soak times, gas flow rates and/or levels of nitrogenin the gas mixture are preferred.

In step 1048 the second sintering temperature is ramped downward fromthe reducing atmosphere second soak temperature (T_(RA soak 2)) to acool down temperature (T_(CD1)). In preferred examples, T_(CD1) rangesfrom about 1600° C. to about 2000° C., more preferably from about 1700°C. to about 1900° C., and still more preferably from about 1750° C. toabout 1850° C. The ramp time in step 1048 is preferably from about 50minutes to about 90 minutes, more preferably from about 60 minutes toabout 80 minutes, and still more preferably from about 65 minutes toabout 75 minutes.

As the foregoing indicates, in the example of steps 1046 and 1048, themaximum sintering temperature during the second sintering period(T_(2max) in FIG. 7) is the same as the initial second sintering periodtemperature (T_(2i) in FIG. 7). However, this will not necessarily bethe case, and in other examples, the maximum sintering temperature(T_(2max)) during the second sintering period will exceed the initialtemperature (T_(2i)) during the second sintering period.

The sintering furnace heating source is de-energized in step 1050, andthe temperature is allowed to fall in an unregulated manner until itreaches a gas cessation value. When the temperature reaches a gascessation temperature value, the flow of the partially-nitrogenatedreducing atmosphere gases is discontinued (step 1062). In certainexamples, the gas cessation temperature value ranges from about 200° C.to about 500° C., preferably from about 250° C. to about 400° C., andmore preferably from about 300° C. to about 350° C.

The method of FIG. 6 yields a sintered, hot surface silicon carbideigniter body that comprises nitrogen. The nitrogen content is preferablyfrom about 500 ppm to about 1500 ppm by weight, preferably from about550 ppm to about 1300 ppm by weight, and more preferably from about 600ppm to about 1000 ppm by weight of nitrogen. The sintered igniter bodypreferably consists essentially of silicon carbide, aluminum, at leastone transition metal (which may be present as a transition metalsilicide), and nitrogen, although oxygen, vanadium, and chromium may bepresent as impurities in trace amounts. Hot surface igniter bodiesprepared in accordance with the method of FIG. 6 preferably a negativetemperature coefficient. In the same or other examples, such igniterbodies also have a porosity that is greater than about seven (7)percent, more preferably greater than about ten (10) percent, and stillmore preferably greater than about fifteen (15) percent. In addition,the density of the sintered igniters preferably differs from their green(unsintered) density by an amount that is no more than about five (5)percent, preferably no more than about two (2) percent, and morepreferably no more than about one (1) percent.

Igniters prepared in accordance with the method of FIG. 6 preferablyhave a room temperature resistivity that is from about 0.2 ohm-cm toabout 2.0 ohm-cm, more preferably from about 0.25 ohm-cm to about 1.0ohm-cm, and still more preferably from about 0.3 ohm-cm to about 0.4ohm-cm. Hot surface igniter bodies prepared in accordance with themethod of FIG. 6 preferably have a high temperature resistivity (i.e.,resistivity at 1000° C.) of from about 0.12 ohm-cm to about 0.25 ohm-cm,more preferably from about 0.14 ohm-cm to about 0.20 ohm-cm, and stillmore preferably from about 0.18 ohm-cm to about 0.19 ohm-cm. Hot surfaceigniter bodies prepared in accordance with the method of FIG. 6preferably have a ratio of room temperature resistivity to hightemperature resistivity of from about 1.5 to about 2.5, preferably fromabout 1.7 to about 2.3, and more preferably from about 1.9 to about 2.1.

Referring again to FIG. 2, a silicon carbide hot surface igniter 20 madein accordance with the methods of FIGS. 3, 4, 5, and/or 6 is depicted.The igniter body 22 is sintered and has a proximal end 53 and a distalend 30. The proximal end 53 is spaced apart from the distal end 30 alongthe length axis L. Igniter body 22 includes four legs 32, 34, 36, and38, each of which has a length along the length axis L and a width alongthe width axis W. The legs 32, 34, 36, and 38 are provided by cuttingslots into the igniter body 22 after it is sintered. Each leg 32, 34,36, and 38 defines a region of reduced cross-sectional area(perpendicular to the length axis L) and increases the path length ofcurrent flow from first proximal end 56 to second proximal end 58, whichare spaced apart from one another along the width axis W and which harerespectively in electrical communication with opposite terminals of asource of electrical potential. The pattern of legs 32, 34, 36, and 38is sometimes referred to as a “serpentine” pattern in the art of hotsurface igniter design.

First leg 32 has a proximal end 56 and a distal end 48. Leg 34 isadjacent leg 32 in the width direction and has a proximal end 46 and adistal end 48. Thus, first and second legs 32 and 34 have separateproximal ends 56 and 46 that are spaced apart from one another along thelength and width axes, but share a common distal end 48. The commondistal end 48 provides a path for current flow from first leg 32 tosecond leg 34.

Third leg 36 has a proximal end 46 and a distal end 50. Third leg 36 andsecond leg 34 share a common proximal end 46 but have distal ends 48 and50 that are spaced apart from one another along the width axis. Thus,common proximal end 46 provides a location for current flow from thesecond leg 34 to the third leg 36.

Third leg 36 and fourth leg 38 share a common distal end 50 and haveproximal ends 46 and 58 that are spaced apart from one another alongboth the length and width axes. The common distal end 50 provides alocation for current flow from the third leg 36 to the fourth leg 38.

As shown in FIG. 2, the first leg proximal end 56 and fourth legproximal end 58 are spaced apart along the width axis. The first legproximal end 56 is operatively connected to conductor 26 a withinterminal block 24, and fourth leg proximal end 58 is operativelyconnected to conductor 26 b within terminal block 24. In certainexamples, portions of the proximal leg ends 56 and 58 (not visible inFIG. 2) are arc sprayed with nickel to facilitate electrical connectionto conductors 26 a and 26 b. The first and fourth leg proximal ends 56and 58 are in electrical communication with one another exclusively byway of the sintered igniter body 22. First leg proximal end 56 includesa shoulder 60, a concave transition 44, a straight transition 64 and asloped transition 66 that is located distally from the concavetransition 44 and straight transition 64 along the length axis L.Correspondingly, second leg proximal end 58 includes a shoulder 68, aconcave transition 54, a straight transition 74, and a sloped transition76, wherein the sloped transition is 76 is located distally from thestraight transition 74 and concave transition 54 along the length axis.The silicon carbide hot surface igniter body 22 preferably has thesilicon carbide, aluminum, at least one transition metal, and nitrogencontent described previously.

As mentioned previously, in a third aspect of the present disclosure, asilicon carbide hot surface igniter body is prepared by sintering agreen body comprising silicon carbide in one reducing atmosphere that issubstantially or wholly devoid of nitrogen and in another reducingatmosphere that is partially nitrogenated. In certain examples, the stepof sintering the unsintered hot surface igniter body in a reducingatmosphere that is substantially devoid of nitrogen is carried outbefore the step of sintering the unsintered hot surface igniter body ina partially-nitrogenated reducing atmosphere. In a preferredimplementation, the first reducing atmosphere that is substantiallydevoid of nitrogen comprises a noble gas, and the second partiallynitrogenated atmosphere comprises nitrogen and the noble gas. Preferrednoble gases include helium and/or argon. Argon is most preferred.

Referring to FIG. 8, a method of sintering an unsintered hot surfaceigniter body is described. The unsintered hot surface igniter bodycomprises silicon carbide in an amount sufficient to provide a siliconcarbide content in the sintered body that is at least about 90 percent,preferably at least about 95 percent, and more preferably at least about99 percent by weight of the sintered hot surface igniter body. Incertain preferred examples, the unsintered igniter body includesaluminum oxide, and in other preferred examples. When aluminum oxide ispresent, it is preferably present in an amount sufficient to provide analuminum content (on an atomic aluminum basis) in the sintered hotsurface igniter body which is at least about 200 ppm, preferably atleast about 300 ppm, more preferably at least about 400 ppm, and stillmore preferably at least about 450 ppm. In the same or other examples,the amount of aluminum oxide is sufficient to yield a sintered igniterbody having an aluminum content (on an atomic aluminum basis) that is nogreater than about 1000 ppm, preferably no greater than about 800 ppm,more preferably no greater than about 600 ppm, and still more preferablyno greater than about 550 ppm by weight of the sintered hot surfaceigniter body. The aluminum in the sintered hot surface igniter may bepresent as aluminum atoms incorporated into the silicon carbide latticeor as an aluminum compound. However, aluminum atoms are typicallyincorporated into the silicon carbide lattice. In certain preferredexamples, the method of FIG. 8 is carried out without using anydensification aids. The excluded densification aids include boroncarbide, boron nitride, aluminum carbide, carbon, beryllium oxide,hafnium oxide, and yttrium oxide. In certain examples, the hot surfaceigniter bodies produced by the method of FIG. 8 are iron free orsubstantially iron free.

The silicon carbide in the unsintered hot surface igniter bodypreferably comprises a coarse portion and a fines portion. The coarseportion preferably comprises at least about 20 percent, more preferablyat least about 30 percent, and still more preferably at least about 40percent by weight of the silicon carbide in the unsintered body slurry.The coarse portion preferably comprises no more than 80 percent, morepreferably no more than about 70 percent, and still more preferably nomore than about 60 percent by weight of the silicon carbide in theunsintered hot surface igniter body.

In certain examples, the unsintered igniter body comprises a relativelyresistive portion and a relatively conductive portion, and the foregoingamounts of silicon carbide and aluminum oxide are present in therelatively resistive portion. In preferred implementations, therelatively resistive portion is distal of the relatively conductiveportion so that the relatively conductive portion is between therelatively resistive portion and the conductors connected to a source ofelectrical potential. The relatively conductive proximal portion in theunsintered relatively conductive proximal portion comprises a conductivematerial, such as at least one transition metal silicide or transitionmetal silicide former, which reduces the resistivity of the relativelyconductive portion compared to the relatively resistive portion. Therelatively resistive distal portion is substantially or completelydevoid of transition metals. The transition metal in the at least onetransition metal silicide or transition metal silicide former used toform the unsintered proximal region of the igniter body is preferablyselected from the group consisting of tantalum (Ta), tungsten (W),molybdenum (Mo), zirconium (Zr), titanium (Ti), iron (Fe), and nickel(Ni). Suitable transition metal silicide formers are preferably selectedfrom the group consisting of oxides, carbides, salts, and the metalitself. Suitable salts include nitrates. In certain examples, molybdenumdisilicide is especially preferred. The method of FIG. 8 can be carriedout on unsintered igniter bodies that include only a relativelyresistive portion as well as those that include both a relativelyresistive and a relatively conductive portion.

Referring again to FIG. 8, in step 1066 the unsintered hot surfaceigniter body is sintered to recrystallize the silicon carbide fines in areducing atmosphere that is substantially or entirely devoid of nitrogenfor a first sintering period. The reducing atmosphere may comprise aninert gas other than nitrogen. Suitable examples include noble gasessuch as argon and helium. In one example, the reducing atmosphereconsists essentially of argon. Without wishing to be bound by anytheory, it is believed that during step 1066 silicon carbide finesrecrystallize, but since the reducing atmosphere is substantially orentirely devoid of nitrogen, there is no incorporation of nitrogen intothe lattice of the recrystallized silicon carbide.

In step 1068, the igniter body is sintered to recrystallize siliconcarbide fines in a nitrogenated reducing atmosphere that is preferablypartially-nitrogenated, for a second sintering period. In one example,the partially-nitrogenated reducing atmosphere comprises nitrogen and anoble gas such as helium and/or argon. In another example, thepartially-nitrogenated reducing atmosphere preferably comprises nitrogenin amount that is at least about 10 mole percent, more preferably atleast about 15 mole percent, and still more preferably at least about 20mole percent of the reducing atmosphere, and even more preferably nomore than about 25 mole percent of the reducing atmosphere. Inaccordance with the example, nitrogen is preferably present in an amountno greater than about 80 mole percent, more preferably no more thanabout 70 mole percent, still more preferably no more than about 60 molepercent, and even more preferably no more than about 50 mole percent ofthe reducing atmosphere. In the same or other examples, the reducingatmosphere further comprises an inert gas other than nitrogen, such ashelium or argon. Argon is especially preferred. Without wishing to bebound by any theory, it is believed that during step 1068, siliconcarbide fines recrystallize and incorporate nitrogen into the siliconcarbide lattice.

In step 1070, sintering is carried out with the partially-nitrogenatedreducing atmosphere of step 1068 for a third sintering period in amanner that increases the oxidation resistance of the igniter. Withoutwishing to be bound by any theory, it is believed that in step 1070recrystallization of silicon carbide fines continues but with relativelyless incorporation of nitrogen fines into the silicon carbide latticethan during step 1068. The three sintering periods 1066, 1068, and 1070are characterized by temperature profiles wherein the maximumtemperature in a given sintering period is greater than or equal to themaximum temperature in the preceding periods and is greater than theminimum temperature in the preceding periods.

The method of FIG. 8 yields a relatively resistive sintered, siliconcarbide composition that comprises nitrogen. The nitrogen content is atleast about 100 ppm, preferably at least about 200 ppm, and still morepreferably at least about 300 ppm by weight of the sintered hot surfaceigniter body. In the same or other examples the nitrogen content is nomore than about 600 ppm, preferably no more than about 550 ppm, andstill more preferably no more than about 500 ppm by weight of the hotsurface igniter body. The igniter body preferably has a negativetemperature coefficient.

In certain preferred examples, the relatively resistive sintered siliconcarbide compositions prepared in accordance with the method of FIG. 8have a high temperature resistivity (i.e., at 1000° C.) of from about0.8 ohm-cm to about 3.5 ohm-cm, preferably from about 1 ohm-cm to about3 ohm-cm, and more preferably from about 2 ohm-cm to about 2.5 ohm-cm.At the same time, the relatively resistive sintered silicon carbidecomposition has a room temperature resistivity of at least about 3ohm-cm, preferably at least about 3.5 ohm-cm, and more preferably atleast about 4 ohm-cm. The relatively resistive sintered silicon carbidecomposition has a room temperature resistivity of no more than about 60ohm-cm, preferably no more than about 40 ohm-cm, and still morepreferably no more than about 20 ohm-cm. The sintered silicon carbidecomposition has a ratio of room temperature resistivity to hightemperature (1000° C.) resistivity that is from about 5 to about 20,preferably from about 8 to about 15, and more preferably from about 10to about 12. In preferred examples, the relatively resistive siliconcarbide composition is essentially or completely free of transitionmetals and forms the distal part of an igniter body, wherein theproximal part of the igniter body is relatively conductive and comprisessilicon carbide and at least one transition metal silicide. Both therelatively resistive and relatively conductive compositions aresubjected to the sintering method of FIG. 8.

The relatively resistive sintered silicon carbide compositions preparedin accordance with the method of FIG. 8 preferably consist essentiallyof silicon carbide, aluminum, and nitrogen, although transition metals,vanadium, chromium, and oxygen may be present as impurities in traceamounts. Igniter bodies formed from the relatively resistive sinteredsilicon carbide compositions of the method of FIG. 8 preferably have adensity that is at least about 70 percent, preferably at least about 75percent, and more preferably at least about 80 percent of thetheoretical maximum density. The igniter bodies preferably have adensity that is no greater than about 90 percent of the theoreticalmaximum density, more preferably no greater than about 87 percent of thetheoretical maximum density, and still more preferably no greater thanabout 85 percent of the theoretical maximum density.

In addition, relatively resistive sintered silicon carbide compositionsprepared in accordance with the method of FIG. 8 preferably have asintered density that differs from the unsintered density by no morethan about five (5) percent, preferably no more than about two (2)percent, and still preferably no more than about one (1) percent. In thesame or other examples, igniter bodies formed from silicon carbideigniter compositions prepared in accordance with the method of FIG. 8have a porosity that is greater than about seven (7) percent, morepreferably greater than about ten (10) percent, and still morepreferably greater than about fifteen (15) percent.

As mentioned previously, igniter bodies are slotted to define regions ofreduced cross-sectional area that provide a desired level of resistiveheating for an igniter body having a particular composition andassociated resistivity. In many cases, to meet certain performancerequirements, a serpentine igniter design such as the one depicted inFIG. 2 is required when using igniters prepared using known processesand compositions. Such designs include elongated regions of reducedcross-sectional area which are particularly vulnerable to damage.

In contrast to known processes, the method of FIG. 8 provides igniterbodies with improved electrical properties (e.g., room and hightemperature resistivities) which minimizes or reduces the necessity forcreating elongated regions of reduced cross-sectional area. Theresulting igniter bodies have improved “strength.” As used herein,igniter “strength” may be quantified using a “single point load” test,an “impact test”, and a “drop test.” Igniter strength is important asigniters are subjected to several events that can cause breakage,including handling before and after shipping, installation, andvibratory shock when moving an appliance in which the igniter isinstalled. Under the single point load test, an assembled igniter(including the igniter body and terminal block) is subjected to a singlepoint load at the distal end of the igniter body when the assembledigniter is laid on a flat, rigid surface. The load is increased untilthe igniter fractures. In preferred examples, the method of FIG. 8 isused to prepare a two-leg igniter (FIGS. 10 and 13 depict examples oftwo leg igniters) for which fracture occurs at a single point load thatis no less than about two (2) pounds, preferably no less than about fourpounds, and still more preferably no less than about five (5) pounds. Incertain preferred examples, single point loads of up to about eight (8)pounds and more preferably up to about ten (10) pounds can be sustainedwithout fracture.

In the “impact test,” the terminal block of an assembled igniter isstruck along the thickness dimension with a one pound steel weight byallowing the weight to fall onto the terminal block from varying heightsuntil the igniter fractures. In certain preferred examples, two-legigniters comprising igniter bodies prepared in accordance with themethod of FIG. 8 withstand impact from drop heights that are at leastabout two (2) inches, preferably at least about four (4) inches and morepreferably, at least about five (5) inches.

In the “drop test,” an assembled igniter is dropped such that the distalend strikes a high density polyethylene surface from heights that arevaried until the igniter fractures. In preferred examples, the assembledigniter does not fracture until a drop height of at least four (4)inches, preferably at least about five (5) inches, and more preferablyat least about eight (8) inches is used. In some examples, the dropheight required to cause fracture is at least about ten (10) inches,preferably at least about fifteen (15) inches, and more preferably atleast about twenty (20) inches.

Referring to FIG. 9, another method of sintering an unsintered, siliconcarbide hot surface igniter body is described. The unsintered igniterbody may have a relatively resistive composition and a relativelyconductive composition of the types described with respect to the methodof FIG. 8 or may be carried out on only the relatively resistivecomposition. In certain preferred examples, the method of FIG. 9 iscarried out without using any densification aids. The excludeddensification aids include boron carbide, boron nitride, aluminumcarbide, carbon, beryllium oxide, hafnium oxide, and yttrium oxide.

In step 1072, the unsintered igniter body is sintered in a firstreducing atmosphere that is substantially or entirely devoid of nitrogenat a first sintering temperature comprising one or more first sinteringtemperature values for a first sintering period. In step 1074, theigniter body is sintered in a partially nitrogenated reducing atmosphereat a second sintering temperature comprising one or more secondtemperature values for a second sintering period. During each sinteringperiod, the pressure preferably ranges from about 12 psia to about 18psia, more preferably from about 13 psia to about 17 psia, and stillmore preferably from about 15 psia to about 16 psia (i.e., from about0.3 psig to about 1.3 psig).

In step 1076, the igniter body is sintered in the partiallynitrogenated, second reducing atmosphere at a third sinteringtemperature comprising one or more third temperature values for a thirdsintering period.

In additional examples of step 1072, the first sintering temperatureincreases from a relatively lower initial value when the reducingatmosphere that is substantially devoid of nitrogen is first introducedinto the sintering furnace to relatively higher final value when thepartially-nitrogenated reducing atmosphere is introduced in thesintering furnace. In additional examples of step 1074, the secondsintering temperature increases from a relatively lower initial valuewhen the partially-nitrogenated reducing atmosphere is introduced in thesintering furnace to a relatively higher final value at whichincorporation of nitrogen into the silicon carbide lattice is believedto be substantially complete or complete.

In certain exemplary implementations, step 1072 comprises sintering inthe nitrogen-deficient first reducing atmosphere at a first sinteringtemperature of at least about 2380° C., preferably at least about 2390°C., and more preferably at least about 2400° C. for a first sinteringperiod of at least about 15 minutes, preferably at least about 20minutes, and more preferably at least about 25 minutes. In suchimplementations of step 1072, the first sintering temperature is no morethan about 2460° C., preferably no more than about 2455° C., and stillmore preferably no more than about 2450° C. The first sintering periodin such exemplary implementations of step 1072 is preferably no morethan about 60 minutes, more preferably no more than about 40 minutes,and still more preferably no more than about 35 minutes.

In certain exemplary implementations of step 1074, an unsintered igniterbody is sintered in a partially-nitrogenated reducing atmosphere at asecond sintering temperature that is at least about 2400° C., preferablyat least about 2425° C., and more preferably at least about 2450° C. fora second sintering period of at least about 10 minutes, preferably atleast about 12 minutes, and more preferably, at least about 15 minutes.At the same time, the second sintering period in such exemplaryimplementations of step 1074 is preferably no more than about 90minutes, more preferably no more than about 70 minutes, and still morepreferably no more than about 100 minutes. In accordance with suchexemplary implementations of step 1074, nitrogen is preferably notintroduced until a sintering temperature of at least about 2400° C.,preferably at least about 2425° C., and more preferably at least about2450° C. is reached.

In additional examples of step 1076, the third sintering temperature isincreased from a relatively lower initial value to a maximum value,after which the third sintering temperature is progressively reduceduntil the furnace heat source is de-energized and the flow of thereducing atmosphere gases into the sintering furnace is discontinued. Inother examples, the initial third sintering temperature is the maximumthird sintering temperature. In certain preferred examples of step 1076,the third sintering temperature is at least 2500° C. for a period of atleast about 30 minutes, preferably at least about 40 minutes, and stillmore preferably at least about 50 minutes.

The three sintering periods 1072, 1074, and 1076 are characterized bytemperature profiles wherein the maximum temperature of a givensintering period is greater than or equal to the maximum temperature ofthe preceding periods and is greater than the minimum temperature of thepreceding periods.

The method of FIG. 9 yields a sintered, hot surface silicon carbideigniter composition that comprises nitrogen. The nitrogen content of therelatively resistive composition is at least about 100 ppm, preferablyat least about 200 ppm, and still more preferably at least about 300 ppmby weight of the sintered hot surface igniter body. In the same or otherexamples the nitrogen content is no more than about 600 ppm, preferablyno more than about 550 ppm, and still more preferably no more than about500 ppm by weight of the distal region of the hot surface igniter body.The relatively resistive sintered igniter composition preferably has anegative temperature coefficient. In certain preferred examples, therelatively resistive sintered silicon carbide compositions prepared inaccordance with the method of FIG. 9 have a high temperature resistivity(i.e., at 1000° C.) of from about 0.8 ohm-cm to about 3.5 ohm-cm,preferably from about 1 ohm-cm to about 3 ohm-cm, and more preferablyfrom about 2 ohm-cm to about 2.5 ohm-cm. At the same time, therelatively resistive sintered silicon carbide composition has a roomtemperature resistivity of at least about 3 ohm-cm, preferably at leastabout 3.5 ohm-cm, and more preferably at least about 4 ohm-cm. Thesintered silicon carbide composition has a room temperature resistivityof no more than about 60 ohm-cm, preferably no more than about 40ohm-cm, and still more preferably no more than about 20 ohm-cm. Thesintered silicon carbide composition has a ratio of room temperatureresistivity to high temperature (1000° C.) resistivity that is fromabout 5 to about 20, preferably from about 8 to about 15, and morepreferably from about 10 to about 12. In preferred examples, therelatively resistive silicon carbide composition is essentially orcompletely free of transition metals and forms the distal part of anigniter body, wherein the proximal part of the igniter body isrelatively conductive and comprises silicon carbide and at least onetransition metal. Both the relatively resistive and relativelyconductive compositions are subjected to the sintering method of FIG. 9.Without wishing to be bound by any theory, it is believed that the atleast one transition metal is present as at least one transition metalsilicide at the grain boundaries.

Relatively resistive sintered silicon carbide compositions prepared inaccordance with the method of FIG. 9 preferably consist essentially ofsilicon carbide, aluminum, and nitrogen, although transition metals,vanadium, chromium, and oxygen may be present as impurities in traceamounts. Igniter bodies formed from the sintered silicon carbidecompositions of the method of FIG. 9 preferably have a density that isat least about 70 percent, preferably at least about 75 percent, andmore preferably at least about 80 percent of the theoretical maximumdensity. The igniter bodies preferably have a density that is no greaterthan about 90 percent of the theoretical maximum density, morepreferably no greater than about 87 percent of the theoretical maximumdensity, and still more preferably no greater than about 85 percent ofthe theoretical maximum density.

In addition, relatively resistive sintered silicon carbide compositionsprepared in accordance with the method of FIG. 9 preferably have asintered density that differs from the unsintered density by no morethan about five (5) percent, preferably no more than about two (2)percent, and still preferably no more than about one (1) percent. In thesame or other examples, igniter bodies formed from silicon carbideigniter compositions prepared in accordance with the method of FIG. 9have a porosity that is greater than about seven (7) percent, morepreferably greater than about ten (10) percent, and still morepreferably greater than about fifteen (15) percent.

Igniter bodies having these properties can, in certain examples, befabricated using only two legs (as shown in FIG. 10) instead of fourlegs (as shown in FIG. 2) while still providing desired electricalproperties. Thus, certain exemplary implementations of the method ofFIG. 9 provide igniter bodies with an improved form factor over theprior art. In certain preferred examples, igniter bodies prepared inaccordance with the method of FIG. 9 are slotted to provide a two-legigniter having the igniter strength properties described previously withrespect to the method of FIG. 8.

FIG. 12 illustrates temperature and time values in one implementation ofthe method of FIG. 9. In accordance with the method, sintering period 1begins with the introduction of the first reducing atmosphere that issubstantially or wholly devoid of nitrogen. During the first sinteringperiod, the first sintering temperature increases from an initial valueT_(1i) to a final value T_(1f). The final first temperature value T_(1f)is equal to the initial second temperature value T_(2i) for the secondsintering period. The beginning of the second sintering period isinitiated by the introduction of a partially-nitrogenated reducingatmosphere into the sintering furnace. In one example, the introductionof the partially-nitrogenated reducing atmosphere is carried out bystarting a flow of nitrogen into the sintering furnace while maintaininga flow rate of the inert gas (e.g., argon and/or helium) used to providethe first reducing atmosphere that is substantially or wholly devoid ofnitrogen. Sintering period 3 begins at an initial temperature T_(3i)that is the same as the final sintering temperature T_(2f) from thesecond sintering period. The initial third temperature T_(3i) ispreferably selected to increase the oxidation resistance of the igniterbody and is generally at a level where incorporation of nitrogen intothe lattice of recrystallized silicon carbide is believed to besignificantly reduced relative to the initial second sinteringtemperature value T_(2i).

In certain examples, the initial first temperature value T_(1i) rangesfrom about 800° C. to about 1000° C., preferably from about 850° C. toabout 950° C., and more preferably from about 875° C. to about 925° C.The first sintering period is preferably from about 90 minutes to about150 minutes, more preferably from about 100 minutes to about 140minutes, and still more preferably from about 110 minutes to about 130minutes. In the same or other examples, the final first temperaturevalue T_(1f) and the initial second temperature value T_(2i) ranges fromabout 2400° C. to about 2525° C., preferably from about 2425° C. toabout 2500° C., and more preferably from about 2450° C. to about 2480°C.

In preferred implementations, during the first sintering period, thefirst sintering temperature is held at a temperature of at least about2000° C. for a first subperiod of at least about 30 minutes, preferablyat least about 35 minutes, and more preferably at least about 40minutes. During the first subperiod, the first sintering temperature ispreferably no more than about 2525° C., more preferably no more thanabout 2500° C. and still more preferably no more than about 2480° C.

In addition to or in lieu of the first subperiod, during the firstsintering period the first sintering temperature may be held at atemperature of at least about 2200° C. for a second subperiod of atleast about 15, preferably at least about 20 minutes, and still morepreferably, at least about 25 minutes. During the second subperiod, thefirst sintering temperature is preferably no more than about 2525° C.,more preferably no more than about 2500° C. and still more preferably nomore than about 2480° C. In certain examples, the second subperiod ispreferably no more than about 30 minutes, more preferably no more thanabout 25 minutes, and still more preferably no more than about 20minutes.

In addition, during the first sintering period there may also be a thirdsubperiod in addition to or in lieu of either of the first and secondsubperiods during which the first sintering temperature is at leastabout 2300° C. for a third subperiod of at least about 5 minutes,preferably at least about 10 minutes, and more preferably at least about15 minutes. During the third subperiod, the first sintering temperatureis preferably no more than about 2525° C., more preferably no more thanabout 2500° C. and still more preferably no more than about 2480° C. Thebeginning of the first sintering period occurs when the reducingatmosphere that is substantially or entirely devoid of nitrogen isintroduced to the sintering furnace. The first sintering period endswith the introduction of nitrogen to create a partially-nitrogenatedreducing atmosphere.

In the same or other examples, the final second temperature value T_(2f)and the initial third temperature value T_(3i) range from about 2475° C.to about 2575° C., preferably from about 2500° C. to about 2550° C., andmore preferably from about 2520° C. to about 2530° C. The secondsintering period may include one or more subperiods during which thesecond sintering temperature is held at or above a certain thresholdtemperature.

The maximum third temperature value T_(3max) ranges from about 2500° C.to about 2550° C., preferably from about 2510° C. to about 2540° C., andstill more preferably from about 2520° C. to about 2530° C. The thirdsintering period is preferably from about 90 minutes to about 240minutes, more preferably from about 120 minutes to about 210 minutes,and still more preferably from about 160 minutes to about 200 minutes.In certain preferred examples, the maximum temperature during the thirdsintering period is the same as the initial temperature.

In preferred examples, the third sintering temperature is held at avalue of at least about 2500° C., preferably at least about 2510° C.,and more preferably at least about 2520° C. for a subperiod that rangesfrom about 40 minutes to about 80 minutes, preferably from about 50minutes to about 75 minutes, and still more preferably from about 55minutes to about 65 minutes. During the subperiod, the third sinteringtemperature is preferably no greater than about 2550° C., morepreferably no greater than about 2540° C., and still more preferably nogreater than about 2530° C.

As indicated in FIG. 12, after the third sintering temperature is heldat the maximum value (which may equal the initial value) for a selectedperiod of time, a cool down period begins in which the sinteringtemperature is progressively reduced to a point at which the heatingelement in the sintering furnace is de-energized. After a particularcool-down temperature threshold is reached, the flow of the inert gasesproviding the partially-nitrogenated reducing atmosphere isdiscontinued. During the third sintering period, the third sinteringtemperature is at least about 200° C., preferably at least about 250° C.and more preferably at least about 300° C.

In certain examples, the first, second, and third sintering periodsdescribed in FIGS. 9 and 12 may comprise one or more temperature values.They may also comprise one or more temperature ramps and/or temperaturesoaks.

Another method of sintering an unsintered, silicon carbide, hot surfaceigniter is depicted in FIG. 11. The unsintered igniter body may have thecomposition described previously with respect to the methods of FIGS.8-9. In certain preferred examples, the method of FIG. 11 is carried outwithout using any densification aids. The excluded densification aidsinclude boron carbide, boron nitride, aluminum carbide, carbon,beryllium oxide, hafnium oxide, and yttrium oxide.

In step 1078 a vacuum system operatively connected to the interior ofthe sintering furnace (in which a batch of unsintered igniter bodies waspreviously loaded) is activated to purge air and reduce the air pressureto a value of from about 5 microns of mercury (relative to vacuum) toabout 30 microns, preferably from about 10 microns to about 20 microns,and more preferably from about 14 microns to about 16 microns.

The sintering furnace is energized in step 1080 and the sinteringfurnace temperature is ramped from room temperature to a final vacuumtemperature (T_(vac final)), during a vacuum ramp period. In certainexamples, T_(vac final) ranges from about 800° C. to about 1000° C.,preferably from about 850° C. to about 950° C., and more preferably fromabout 875° C. to about 925° C. In certain examples, the vacuum rampperiod ranges from about 20 minutes to about 70 minutes, preferably fromabout 30 minutes to about 60 minutes, and more preferably from about 40minutes to about 50 minutes. The inert gases used to provide a reducingatmosphere that is substantially devoid of nitrogen have not yet beenintroduced at this point in the method. Once the final vacuumtemperature T_(vac final) has been reached, in step 1082 a flow of inertgas that is substantially or wholly devoid of nitrogen is introducedinto the sintering furnace. The inert gas may comprise, for example, atleast one noble gas, such as argon and/or helium. In certain examples,argon is preferred. In one implementation, the inert gas consistsessentially of argon. The introduction of the reducing atmosphere beginsthe first sintering period shown on FIG. 12. During the sinteringperiods, the pressure preferably ranges from about 12 psia to about 18psia, more preferably from about 13 psia to about 17 psia, and stillmore preferably from about 15 psia to about 16 psia (i.e., from about0.3 psig to about 1.3 psig).

The sintering furnace temperature is ramped from the final vacuumT_(vac final) temperature to an initial reducing atmosphere soaktemperature (T_(RA Soak 1)) during a first ramp period in step 1084. Thefirst reducing atmosphere soak temperature T_(RA Soak 1) is preferablyfrom about 2075° C. to about 2125° C., more preferably from about 2080°C. to about 2120° C., and still more preferably from about 2090° C. toabout 2110° C. The first ramp period preferably ranges from about 40minutes to about 120 minutes, more preferably from about 60 minutes toabout 100 minutes, and still more preferably from about 75 minutes toabout 85 minutes.

In step 1086 the initial reducing atmosphere soak temperatureT_(RA Soak 1) is maintained for a first soak period that ranges fromabout 1 minute to about 15 minutes, preferably from about 2 minutes toabout 10 minutes, and more preferably from about 3 minutes to about 7minutes.

The first sintering temperature is ramped from the initial reducingatmosphere soak temperature value T_(RA Soak 1) to a second reducingatmosphere soak temperature value T_(RA Soak 2) in step 1088. The secondreducing atmosphere soak temperature T_(RA Soak 2) is from about 2400°C. to about 2500° C., preferably from about 2425° C. to about 2490° C.and more preferably from about 2450° C. to about 2485° C.

After a brief soak (not shown in FIG. 11) of between 30 seconds and 2minutes, nitrogen is introduced into the sintering furnace to provide apartially-nitrogenated reducing atmosphere (step 1090) and begin thesecond sintering period. The second sintering temperature is held at thesecond reducing atmosphere soak temperature T_(RA Soak 2) for a periodthat is preferably from about 10 minutes to about 60 minutes, morepreferably from about 15 minutes to about 50 minutes, and still morepreferably from about 25 minutes to about 35 minutes (step 1092).

In step 1094 the sintering temperature is ramped from the second soaktemperature T_(RA Soak 2) to a third soak temperature T_(RA Soak 3)during a third ramp period that ranges from about 1 minute to about 10minutes, preferably from about 9 minutes to about 8 minutes, and morepreferably form about 4 minutes to about 6 minutes. The attainment ofthe third soak temperature ends the second sintering period and beginsthe third sintering period (Step 1096),

The third soak temperature is preferably one sufficient to impartoxidation resistance to the igniter body and ranges from about 2475° C.to about 2575° C., preferably from about 2500° C. to about 2550° C., andmore preferably from about 2520° C. to about 2530° C. The third soakperiod in step 1098 is preferably from about 20 minutes to about 120minutes, more preferably from about 30 minutes to about 90 minutes, andstill more preferably from about 50 minutes to about 70 minutes.

At the conclusion of the third soak period, the third sinteringtemperature is ramped downward from the third soak temperature to a cooldown temperature (T_(CD1)) during a first cool down period byprogressively reducing the heat supplied by the sintering furnaceheating element (step 1100). In preferred examples, T_(CD1) ranges fromabout 1600° C. to about 2000° C., more preferably from about 1700° C. toabout 1900° C., and still more preferably from about 1750° C. to about1850° C. The ramp time in step 1060 is preferably from about 50 minutesto about 90 minutes, more preferably from about 65 minutes to about 80minutes, and still more preferably from about 70 minutes to about 75minutes. At the conclusion of the first cool down period, the sinteringfurnace heating element is de-energized and the sintering furnacetemperature is allowed to fall in an unregulated manner until it reachesa gas cessation value (step 1102). During step 1102 the gases comprisingthe partially-nitrogenated reducing atmosphere continue to flow into thesintering furnace. When the temperature reaches a gas cessationtemperature value, the flow of the partially-nitrogenated reducingatmosphere gases is discontinued (step 1104). In certain examples, thegas cessation temperature value is at least about 200° C., preferably atleast about 250° C., and more preferably at least about 290° C. At thesame time, the gas cessation temperature value is preferably no morethan about 400° C., more preferably no more than about 350° C., andstill more preferably no more than about 310° C. In step 1106, the thirdsintering period ends. In certain preferred examples, the method of FIG.11 is carried out without using any densification aids. The excludeddensification aids include boron carbide, boron nitride, aluminumcarbide, carbon, beryllium oxide, hafnium oxide, and yttrium oxide.

The method of FIG. 11 yields relatively resistive, sintered, hot surfacesilicon carbide igniter compositions that comprise nitrogen. Thenitrogen content is preferably from about 300 ppm to about 700 ppm byweight, preferably from about 350 ppm to about 650 ppm by weight, andmore preferably from about 400 ppm to about 600 ppm by weight ofnitrogen. In certain examples, relatively resistive sintered siliconcarbide igniter compositions prepared in accordance with the method ofFIG. 11 consist essentially of silicon carbide, aluminum, and nitrogen,with trace amounts of oxygen, vanadium, and chromium possibly beingpresent.

In certain preferred examples, the relatively resistive sintered siliconcarbide compositions prepared in accordance with the method of FIG. 11have a high temperature resistivity (i.e., at 1000° C.) of from about0.8 ohm-cm to about 3.5 ohm-cm, preferably from about 1 ohm-cm to about3 ohm-cm, and more preferably from about 2 ohm-cm to about 2.5 ohm-cm.At the same time, the sintered silicon carbide composition has a roomtemperature resistivity of at least about 3 ohm-cm, preferably at leastabout 3.5 ohm-cm, and more preferably at least about 4 ohm-cm. Therelatively resistive sintered silicon carbide composition has a roomtemperature resistivity of no more than about 60 ohm-cm, preferably nomore than about 40 ohm-cm, and still more preferably no more than about20 ohm-cm. The relatively resistive sintered silicon carbide compositionhas a ratio of room temperature resistivity to high temperature (1000°C.) resistivity that is from about 5 to about 20, preferably from about8 to about 15, and more preferably from about 10 to about 12. Inpreferred examples, the relatively resistive silicon carbide compositionis essentially or completely free of transition metals and forms thedistal part of an igniter body, wherein the proximal part of the igniterbody is relatively conductive and comprises silicon carbide and at leastone transition metal, which may be present as a transition metalsilicide. Both the relatively resistive and relatively conductivecompositions are subjected to the sintering method of FIG. 11.

Relatively resistive sintered silicon carbide compositions prepared inaccordance with the method of FIG. 11 preferably consist essentially ofsilicon carbide, aluminum, and nitrogen, although transition metals,vanadium, chromium, and oxygen may be present as impurities in traceamounts. Igniter bodies formed from the relatively resistive sinteredsilicon carbide compositions of the method of FIG. 11 preferably have adensity that is at least about 70 percent, preferably at least about 75percent, and more preferably at least about 80 percent of thetheoretical maximum density. The igniter bodies preferably have adensity that is no greater than about 90 percent of the theoreticalmaximum density, more preferably no greater than about 87 percent of thetheoretical maximum density, and still more preferably no greater thanabout 85 percent of the theoretical maximum density.

In addition, the relatively resistive sintered silicon carbidecompositions prepared in accordance with the method of FIG. 11preferably have a sintered density that differs from the unsintereddensity by no more than about five (5) percent, preferably no more thanabout two (2) percent, and still preferably no more than about one (1)percent. In the same or other examples, igniter bodies formed fromsilicon carbide igniter compositions prepared in accordance with themethod of FIG. 11 have a porosity that is greater than about seven (7)percent, more preferably greater than about ten (10) percent, and stillmore preferably greater than about fifteen (15) percent.

FIG. 10 depicts a silicon carbide hot surface igniter 80 with a hotsurface igniter body 82 made by any of the methods of FIGS. 8, 9, and 11using the same materials described above for those methods. Hot surfaceigniter 80 comprises only two legs 92 and 94. Without wishing to bebound by any theory, it is believed that the use of a sintering processin which the recrystallization of silicon carbide fines is carried outin an inert reducing atmosphere that is substantially devoid of nitrogenfollowed by an inert reducing atmosphere that is partially-nitrogenatedprovides an improvement the high temperature (1000° C.) resistivityrelative to known igniters and those made according to the sinteringmethods of FIGS. 3-6. At the same time, the sintering process isbelieved to provide improved room temperature resistivities and ratiosof room temperature to high temperature resistivity relative to knownigniters and those made according to the sintering methods of FIGS. 3-6.

In certain examples, the foregoing improvement in the ratio of roomtemperature resistivity to high temperature resistivity allows ignitersmade in accordance with the method of FIGS. 8, 9, and 11 to be formedwith only two legs while still achieving desired electrical propertiesand still maintaining an overall length, width, and thickness (where thelength and width are based on the perimeter of the igniter body)comparable to known silicon carbide igniters. The igniter 80 of FIG. 10is an example of such a two-leg silicon carbide igniter. Igniter 80comprises igniter body 82 and terminal block 84. Igniter body 82 has adistal end 90 and a proximal end 88 that are spaced apart long a lengthaxis L. First and second legs 92 and 94 have respective proximal ends 96and 98. Portions of the proximal ends 96 and 98 are arc sprayed with anickel alloy and inserted into the terminal block 84 to connect to arespective one of conductors 86 a and 86 b. The conductors 86 a and 86 bare connected to opposite terminals of a source of electrical potential.The proximal ends 96 and 98 of first and second legs 92 and 94 arespaced apart from one another along the width axis W. However, the firstand second legs 92, 94 share a common distal end 100. The common distalend 100 provides for current flow from the first leg 92 to the secondleg 94. The first and second legs 92 and 94 are defined by a centralslot 110 extending along the length axis L of the igniter body 82. Thecentral slot 110 includes a generally constant width region 112 that islocated proximally of a flared region 114. In the flared region 114, theslot width increases while moving along the length axis L away from theproximal end 88 of the igniter body 82. As a result, the widths of legs92 and 94 along the width axis W are smaller at the flared region 114relative to the generally constant width region 112.

Proximal leg end 96 has a shoulder 116 which is connected to adistally-adjacent concave region 124. The concave region 124 isconnected to a distally-adjacent straight region 126, which is connectedto a distally-adjacent sloped region 128. Similarly, proximal leg end 98has a shoulder 118 that is connected to a distally-adjacent concaveregion 124. Concave region 124 is connected to a distally-adjacentstraight region 120, which is connected to a distally-adjacent slopedregion 122.

In the example of FIG. 10, the igniter body 82 has a varying compositionalong the length axis L. Igniter body legs 92 and 94 comprise firstrespective proximal leg regions 104 and 102 and second respective distalregions 106 and 108 which have different compositions from one another.The distal regions 106 and 108 are formed with a higher resistivity thantheir corresponding proximal leg regions 104 and 102. In certainapplications, the varying resistivities are used to regulate the currentdraw of the igniter 80 at a particular service voltage.

In certain examples of where igniter of FIG. 10 is prepared according tothe methods of FIG. 8, 9, or 11, the distal regions 106, 108 have a hightemperature resistivity (i.e., at 1000° C.) of from about 0.8 ohm-cm toabout 3.5 ohm-cm, preferably from about 1 ohm-cm to about 3 ohm-cm, andmore preferably from about 2 ohm-cm to about 2.5 ohm-cm. At the sametime, the distal regions 106, 108 have a room temperature resistivity ofat least about 3 ohm-cm, preferably at least about 3.5 ohm-cm, and morepreferably at least about 4 ohm-cm. The distal regions 106, 108 have aroom temperature resistivity of no more than about 60 ohm-cm, preferablyno more than about 40 ohm-cm, and still more preferably no more thanabout 20 ohm-cm. The distal regions 106, 108 have a ratio of roomtemperature resistivity to high temperature (1000° C.) resistivity thatis from about 5 to about 20, preferably from about 8 to about 15, andmore preferably from about 10 to about 12. In preferred examples, thedistal regions 106, 108 are essentially or completely free of transitionmetals.

In one preferred example, the proximal regions 104 and 102 are formedwith a conductive material added to the same material used to form thedistal regions 106 and 108. Suitable conductive materials includetransition metal silicides and transition metal silicide formers,wherein the transition metal is selected from the group consisting oftantalum (Ta), tungsten (W), molybdenum (Mo), zirconium (Zr), titanium(Ti), iron (Fe), and nickel (Ni). Suitable transition metal silicideformers are preferably selected from the group consisting of oxides,carbides, salts, and the transition metal itself. In certain examples,molybdenum disilicide is especially preferred. In certain exemplaryimplementations, proximal regions 104 and 102 have a room temperatureresistivity that is less than about 1.5 ohm-cm, preferably less thanabout 1.0 ohm-cm, and more preferably less than about 0.6 ohm-cm. Insuch implementations, proximal regions 104 and 102 have a hightemperature (1000° C.) resistivity that is less than about 0.50 ohm-cm,preferably less than about 0.4 ohm-cm, and more preferably less thanabout 0.3 ohm-cm. In accordance with the same exemplary implementations,the proximal regions 104 and 102 have a ratio of room temperatureresistivity to high temperature resistivity that ranges from about 1.0to about 4.0, preferably from about 1.5 to about 3.0, and morepreferably from about 2.0 to about 2.5.

The at least one transition metal provided in proximal regions 102, 104is preferably included in the green (unsintered) igniter body as atleast one transition metal silicide or at least one transition metalsilicide former, and even more preferably is added to an aqueous slurryof silicon carbide, water, and a latex binder in a manner that creates acomposition profile within the slurry and within the resultingindividual green igniter bodies produced by air curing the slurry (FIG.1). The unsintered igniter body can be created with foregoingcomposition profile using a number of processes, including slip casting,injection molding, dip coating, pressing, infiltration, tape casting,and combinations thereof. However, without wishing to be bound by anytheory, it is believed that the introduction of the at least onetransition metal silicide or transition metal silicide former in theunsintered (green) igniter body as opposed to post-sintering processessuch as infiltration results in the permeation of at least onetransition metal silicide into the silicon carbide grain boundaries. Itis further believed that the introduction of the at least one transitionmetal silicide or transition metal silicide former in the green igniterbody allows for a more modest and controlled increase in conductivity inthe proximal leg regions 102 and 104 than would be possible byintroducing the compound following sintering.

The distal regions 106 and 108 of the legs 92 and 94 comprise siliconcarbide in an amount that is at least about 90 percent, preferably atleast about 95 percent, and more preferably at least about 99 percent byweight of the distal regions 106 and 108. In certain preferred examples,the sintered igniter body includes aluminum. When aluminum is present,it is preferably present in an amount (on an aluminum atomic basis byweight of distal regions 106 and 108) that is at least about 200 ppm,preferably at least about 300 ppm, more preferably at least about 400ppm, and still more preferably at least about 450 ppm. In the same orother examples, the amount of aluminum in the distal regions 106 and 108is no greater than about 1000 ppm, preferably no greater than about 800ppm, more preferably no greater than about 600 ppm, and still morepreferably no greater than about 550 ppm by weight of the distal regions106 and 108. The distal regions 106 and 108 also comprise nitrogen in anamount of at least about 100 ppm, preferably at least about 200 ppm, andstill more preferably at least about 300 ppm by weight of the distalregions 106 and 108. In the same or other examples the distal regions106 and 108 of the sintered hot surface igniter body have a nitrogencontent of no more than about 600 ppm, preferably no more than about 550ppm, and still more preferably no more than about 500 ppm by weight ofthe distal region of the hot surface igniter body. In certain examples,the distal regions 106 and 108 consist essentially of silicon carbide,aluminum, and nitrogen in the foregoing amounts.

The proximal leg regions 102 and 104 comprise silicon carbide in anamount that is at least about 87 percent, preferably at least about 93percent, and even more preferably at least about 97 percent by weight ofthe proximal region. The proximal leg regions also contain at least onetransition metal in an amount ranging by weight of the transition metal(on an atomic basis) of from about 1.3 percent to about thirteen (13)percent, preferably from about 1.9 percent to about 9.5 percent, andstill more preferably from about 3.2 percent to about 6.3 percent.Without wishing to be bound by any theory, the transition metal isbelieved to be in the form of a transition metal silicide present in anamount (of the transition metal silicide compound) ranging from abouttwo (2) to about twenty (20) percent, preferably from about three (3)percent to about fifteen (15) percent, and still more preferably fromabout five (5) percent to about ten (10) percent by weight of theproximal leg regions. The amount of nitrogen in the proximal leg regions102 and 104 is at least about 300 ppm, preferably at least about 350ppm, and more preferably at least about 400 ppm. At the same time, theamount of nitrogen in the proximal leg regions 102 and 104 is no morethan about 700 ppm, preferably no more than about 650 ppm, and stillmore preferably no more than about 600 ppm. In certain examples, thelength of the proximal leg regions 102 and 104 is from about 15 percentto about 70 percent, preferably from about 20 percent to about 60percent, and more preferably from about 30 percent to about 50 percentof the length of igniter body 82 along the length axis.

Because they allow for the use of two legs instead of four, certainexemplary implementations of the method of FIG. 9 also provide improvedigniter strength relative to known silicon carbide igniter fabricationmethods. Thus, the methods can be used to form a two-leg igniter such asthe igniter of FIG. 10. Under the single point load test, the two legigniter 80 of FIG. 10 is subjected to a single point load at distal end100. The load is increased until the igniter 80 fractures. In preferredexamples, fracture occurs at a single point load that is no less thanabout two (2) pounds, preferably no less than about four pounds, andstill more preferably no less than about five (5) pounds. In certainpreferred examples, single point loads of up to about eight (8) poundsand more preferably up to about ten (10) pounds can be sustained withoutfracture.

In the “impact test,” the terminal block 84 of an assembled igniter 90is struck along the thickness dimension with a one pound steel weight byallowing the weight to fall onto the terminal block 84 (made of alumina)from varying heights until the igniter 90 fractures. In certainpreferred examples, igniter 90 withstands impact from drop heights thatare at least about two (2) inches, preferably at least about four (4)inches and more preferably, at least about five (5) inches.

In the “drop test,” an assembled igniter 80 is dropped such that thedistal end 100 strikes a high density polyethylene surface from heightsthat are varied until the igniter fractures. In preferred examples,igniter 80 does not fracture until a drop height of at least four (4)inches, preferably at least about five (5) inches, and more preferablyat least about eight (8) inches is used. In some examples, the dropheight required to cause fracture is at least about ten (10) inches,preferably at least about fifteen (15) inches, and more preferably atleast about twenty (20) inches.

Different igniter applications may have different operating temperatureand current requirements as well as different service voltages. Themethods of FIGS. 8, 9, and 11 and the igniter body design of FIG. 10 maybe used to provide igniter bodies that are adjusted to particularapplications. The degree of nitrogen incorporation into the lattice maybe controlled to adjust the igniter temperature and current draw (at aparticular service voltage) by adjusting the nitrogen concentration orthe nitrogen partial pressure in the reducing atmosphere. It may also becontrolled by varying the sintering temperature at which nitrogen isintroduced into the reducing atmosphere. In addition, for a givenigniter length, adjusting the height of the relatively conductiveproximal regions 102 and 104 in relation to the relatively resistivedistal regions 106 and 108 will vary the igniter operating temperatureand current draw. The same variables may also be manipulated to providea desired degree of igniter strength.

Referring to FIG. 13, another example of a silicon carbide hot surfaceigniter 180 comprising a sintered silicon carbide hot surface igniterbody 182 prepared in accordance with any of the methods of FIGS. 8, 9,and 11 is depicted. Igniter body 182 is similar to the igniter body 82of FIG. 10 in that igniter body 182 comprises two legs 192 and 194.However, central slot 210 of FIG. 13 is configured differently thancentral slot 110 of FIG. 10. Central slot 210 defines first and secondlegs 192 and 194 and comprises a generally straight region 212 and anon-linear region 214. Non-linear region 214 does not include any linearsides and may include a variety of non-linear shapes, including circles,ovals, ellipses, and tear drop shapes. In the illustrated example ofFIG. 13, non-linear region 214 is circular. Non-linear region 214 has amaximum slot width ΔW₂ that is greater than the maximum slot width ΔW₁in the generally straight region 212. Without wishing to be bound by anytheory, it is believed that for an igniter body of a particularcomposition and overall size (as defined by the perimeter of the igniterbody), the use of a non-linear region 214 as part of central slot 210allows a given sintered silicon carbide igniter composition to be formedinto an igniter body in which the spacing ΔW₁ between legs 192 and 194in the straight region is reduced as compared to design in which thenon-linear region 214 is not provided. Thus, in the slotting process, anarea of reduced cross-sectional area normal to current flow isconcentrated in one region along the length of the igniter body 182,allowing the leg spacing ΔW₂ to be reduced. As a result, igniter bodiesusing the non-linear slot region 214 are generally believed to bestronger because the widths of the individual legs 192 and 194 aregenerally greater in the region proximal of the non-linear slot region214. Thus, as compared to igniters with the central slot 110 of FIG. 10,those using a non-linear slot region 214 such as is depicted in FIG. 13are believed to be stronger.

In FIG. 13, igniter body 182 comprises a proximal end 188 and a distalend 190. Legs 192 and 194 have respective proximal ends 196 and 198which are spaced apart from one another along the width axis W. Leg 192has a proximal region 204 and an adjacent distal region 206. Leg 198 hasa proximal region 202 and a distal region 208. Portions of the proximalends 196 and 198 which are not visible are electrically connected toconductors 186 a and 186 b, respectively, in terminal block 184. Theportions are of the proximal ends 196 and 198 are preferably arc sprayedwith a nickel alloy to facilitate the electrical connection toconductors 186 a and 186 b.

Legs 192 and 194 share a common distal region 200, but have proximalends 196 and 198 that are not connected. The common distal region 200provides a path for current flow from leg 192 to leg 194. Proximal legend 196 includes a shoulder 216 and a sloped region 228. Similarly,proximal leg end 198 includes a shoulder 218 and a sloped region 222.

As with the igniter body 82 of FIG. 10, the igniter body 182 of FIG. 13has a varying composition along the length axis L. First respectiveproximal leg regions 204 and 202 and second respective distal regions206 and 208 have different compositions from one another. The distalregions 206 and 208 are formed with a higher resistivity material thantheir corresponding proximal leg regions 204 and 202. In certainapplications, the varying resistivities are used to regulate the currentdraw of the igniter 180 at a particular service voltage.

In certain examples where the igniter of FIG. 13 is prepared inaccordance with any of the methods of FIGS. 8, 9, and 11, the distalregions 206, 208 have a high temperature resistivity (i.e., at 1000° C.)of from about 0.8 ohm-cm to about 3.5 ohm-cm, preferably from about 1ohm-cm to about 3 ohm-cm, and more preferably from about 2 ohm-cm toabout 2.5 ohm-cm. At the same time, the distal regions 206, 208 have aroom temperature resistivity of at least about 3 ohm-cm, preferably atleast about 3.5 ohm-cm, and more preferably at least about 4 ohm-cm. Thedistal regions 206, 208 have a room temperature resistivity of no morethan about 60 ohm-cm, preferably no more than about 40 ohm-cm, and stillmore preferably no more than about 20 ohm-cm. The distal regions 206,208 have a ratio of room temperature resistivity to high temperature(1000° C.) resistivity that is from about 5 to about 20, preferably fromabout 8 to about 15, and more preferably from about 10 to about 12. Inpreferred examples, the distal regions 206, 208 are essentially orcompletely free of transition metals and forms the distal part of anigniter body, wherein the proximal regions 204 and 202 of the igniterbody comprises silicon carbide and at least one transition metal.

In one preferred example, the proximal regions 204 and 202 are formedwith a conductive material that is added to the same material used toform the distal regions 206 and 208. Suitable conductive materialsinclude transition metal silicides and transition metal silicideformers, wherein the transition metal is preferably selected from thegroup consisting of tantalum (Ta), tungsten (W), molybdenum (Mo),zirconium (Zr), titanium (Ti), iron (Fe), and nickel (Ni). Suitabletransitional metal silicide formers are preferably selected from thegroup consisting of oxides, carbides, salts, and the metal itself.Suitable salts include nitrates. In certain examples, the transitionmetal silicide molybdenum disilicide is especially preferred. In certainexemplary implementations, proximal regions 104 and 102 have a hightemperature (1000° C.) resistivity that is less than about 1.5 ohm-cm,preferably less than about 1.0 ohm-cm, and more preferably less thanabout 0.6 ohm-cm. In such implementations, proximal regions 204 and 202have a room temperature resistance that is less than about 0.50 ohm-cm,preferably less than about 0.4 ohm-cm, and more preferably less thanabout 0.3 ohm-cm. In accordance with the same exemplary implementations,the proximal regions 204 and 202 have a ratio of room temperatureresistivity to high temperature resistivity that ranges from about 1.0to about 4.0, preferably from about 1.5 to about 3.0, and morepreferably from about 2.0 to about 2.5.

In accordance with one implementation, the distal regions 206 and 208comprise silicon carbide, aluminum, iron, and nitrogen, but aresubstantially or wholly devoid of transition metals while the proximalregions comprise silicon carbide, aluminum, at least one transitionmetal (which may be present as a transition metal silicide) andnitrogen. To provide at least one transition metal in the proximalregion following sintering, at least one transition metal silicide orsilicide former is preferably included in the green (unsintered) igniterbody, and even more preferably is added to an aqueous slurry of siliconcarbide, aluminum oxide, water, and a latex binder in a manner thatcreates a composition profile within the slurry and within the resultingindividual green igniter bodies produced by air curing the slurry (FIG.1). Without wishing to be bound by any theory, it is believed that theintroduction of the at least one transition metal silicide or transitionmetal silicide former in the unsintered (green) igniter body as opposedto post-sintering processes such as infiltration results in thepermeation of transition metal silicide into the silicon carbide grainboundaries. It is further believed that the introduction of the at leastone transition metal silicide in the green igniter body allows for amore modest and controlled increase in conductivity in the proximal legregions 102 and 104 than would be possible by introducing the compoundfollowing sintering. Suitable transition metals in the at least onetransition metal silicide or transition metal silicide former arepreferably selected from the group consisting of tantalum (Ta), tungsten(W), molybdenum (Mo), zirconium (Zr), titanium (Ti), iron (Fe), andnickel (Ni). Suitable transitional metal silicide formers are preferablyselected from the group consisting of oxides, carbides, salts, and thetransition metal itself. Suitable salts include nitrates.

The distal regions 206 and 208 of the legs 92 and 94 comprise siliconcarbide in an amount that is at least about 90 percent, preferably atleast about 95 percent, and more preferably at least about 99 percent byweight of the distal regions 206 and 208. In certain preferred examples,the sintered igniter body includes aluminum. When aluminum is present,it is preferably present in an amount that is at least about 200 ppm,preferably at least about 300 ppm, more preferably at least about 400ppm, and still more preferably at least about 450 ppm. In the same orother examples, the amount of aluminum (on an aluminum atomic basis) inthe distal regions 206 and 208 is no greater than about 1000 ppm,preferably no greater than about 800 ppm, more preferably no greaterthan about 600 ppm, and still more preferably no greater than about 550ppm by weight of the distal regions 206 and 208. The distal regions 206and 208 also comprise nitrogen in an amount of at least about 300 ppm,preferably at least about 350 ppm, and still more preferably at leastabout 400 ppm by weight of the sintered hot surface igniter body. In thesame or other examples, nitrogen content of the distal regions 206 and208 is no more than about 700 ppm, preferably no more than about 650ppm, and still more preferably no more than about 600 ppm by weight ofthe sintered hot surface igniter body. In certain examples, the distalregions 206 and 208 consist essentially of silicon carbide, aluminum,and nitrogen in the foregoing amounts.

The proximal leg regions 202 and 204 comprise silicon carbide in anamount that is least about 87 percent, preferably at least about 93percent, and even more preferably at least about 97 percent by weight ofthe proximal region.

The proximal leg regions 202 and 204 also contain at least onetransition metal in an amount (on an atomic basis of the at least onetransition metal) ranging from about 1.3 to about thirteen (13),preferably from about 1.9 to about 9.5, and still more preferably fromabout 3.2 to about 6.4 percent by weight of the proximal leg region.Without wishing to be bound by any theory, it is believed that the atleast one transitional metal is present as at least one transition metalsilicide and is present in an amount (of the at least one transitionmetal silicide compound) of from about two (2) to about twenty (20)percent, preferably from about three (3) percent to about fifteen (15)percent, and still more preferably from about five (5) percent to aboutten (10) percent by weight of the proximal leg regions. Proximal legregions 202 and 204 preferably contain nitrogen in the amounts describedabove for distal leg regions 206 and 208. In preferred examples,proximal leg regions 202 and 204 consist essentially of silicon carbide,and nitrogen in the foregoing amounts. In certain examples, the lengthof the proximal leg regions 202 and 204 is from about 15 percent toabout 70 percent, preferably from about 20 percent to about 60 percent,and more preferably from about 30 percent to about 50 percent of thelength of igniter body 182 along the length axis.

In each of the previous embodiments, the extent of nitrogenincorporation into the silicon carbide lattice is controlled, in part,by adjusting the concentration of nitrogen while keeping the totalreducing gas pressure in the sintering furnace at atmospheric pressure.The inclusion of an inert gas, such as a noble gas, allows theconcentration—and hence the partial pressure—of nitrogen to be varied.

As discussed previously, the igniters 80 and 180 of FIGS. 10 and 13include relatively conductive regions 102, 202, 104, 204 and relativelyresistive regions 106, 206, 108, 208. In those examples, the variationsin conductivity and resistivity are provided by adding a conductivematerial such as a transition metal silicide to the proximal regions102, 202, 104, 204. However, other techniques may be used. For example,other techniques that prevent the distal regions 106, 206, 108, and 208from being nitrogen-doped for some period during the sintering processin which the proximal regions 102, 202, 104, 204 are nitrogen doped mayalso be used to provide distinct relatively conductive regions 102, 202,104, 204 and relatively resistive regions 106, 206, 108, and 208.

EXAMPLE 1

This first example demonstrates an implementation of the methods ofFIGS. 3-6. High purity green silicon carbide, aluminum oxide, iron oxide(a transition metal silicide former), a latex binder are combined toform aqueous slurries with varying levels of iron oxide (0.0%, 0.15% and0.45%), 0.15% aluminum oxide and 1.5% latex binder, (by weight and on awater-free basis, i.e., after air curing). The balance is siliconcarbide which comprises a coarse portion and a fines portion. The coarsefraction is 100F and the fine fraction has a D50 (median) of 2.5-3.0microns. The coarse portion comprises 50 percent by weight of the totalamount of silicon carbide, and the fines portion comprises 50 percent byweight of the total amount of silicon carbide. The slurries are pouredinto molds having the overall profile of the igniter body 22 of FIG. 2(i.e., without slots 40, 42, or 43) and air cured to form severalbillets.

The slurries are poured into molds having the overall profile of theigniter body 22 of FIG. 2 (i.e., without slots 40, 42, or 43) and aircured to form several billets. The billets are sliced into 2000individual igniter bodies, which are loaded into a sintering furnacethat is initially open to the atmosphere and at room temperature. Theair in the furnace is evacuated by a vacuum generator that is in fluidcommunication with the interior of the furnace to reach a level of 15microns of mercury (vacuum).

The sintering furnace heating element is energized and placed ontemperature control to control the temperature in the interior of thefurnace. The temperature is ramped from room temperature to an initialreducing atmosphere temperature (T_(1i) in FIG. 7) of 1100° C. at a ramprate of 15° C./min. Starting at a room temperature of 25° C., the rampperiod is 1/15 (1100-25)=72 minutes.

Once the initial reducing atmosphere temperature T_(1i) is reached, thesintering furnace is backfilled with a 100 percent argon to reach apressure of 1 psig in the furnace interior. A steady flow of a mixtureof 50 mole percent nitrogen and 50 mole percent argon is then providedinto and out of the furnace, with an inlet flow rate of 3.5liters/minute. The introduction of the inert gases and the creation ofthe reducing atmosphere marks the beginning of the first sinteringperiod.

The first sintering temperature is ramped from its initial value of1100° C. to a first reducing atmosphere soak temperature T_(RA Soak 1)of 2100° C. at a first ramp rate of 10° C./minute, which corresponds toa first ramp period of 100 minutes. A thermocouple in the sinteringfurnace is initially used to obtain sintering temperature measurements.However, once the first sintering temperature reaches 1100° C., anoptical pyrometer is used.

The first reducing atmosphere soak temperature (T_(RA Soak 1)) of 2100°C. is maintained for a first reducing atmosphere soak period of 5minutes. Following the first reducing atmosphere soak period, the firstsintering temperature is ramped from the first reducing atmosphere soaktemperature (T_(RA Soak 1)) to a second reducing atmosphere soaktemperature (T_(RA Soak 2)) of 2500° C. by ramping from 2100° C. to2500° C. at a second ramp rate of 8° C./min during a second ramp periodof 50 minutes. The second reducing atmosphere soak temperatureT_(RA Soak 2) is the final first sintering temperature T_(1f) and theinitial second sintering temperature T_(2i) (FIG. 7).

The second reducing atmosphere soak temperature T_(RA Soak 2) ismaintained for a second soak period of 60 minutes. Next, a cool downperiod begins, and the second sintering temperature is ramped downwardfrom 2500° C. to 1800° C. at a ramp rate of 10° C./minute, whichcorresponds to a ramp period of 70 minutes. The sintering furnaceheating element is then de-energized, allowing the sintering furnacetemperature to fall in an unregulated manner. Once the second sinteringtemperature reaches 300° C., the flow of nitrogen and argon isdiscontinued, and the reducing atmosphere is evacuated until a slightvacuum is achieved.

The resulting igniter body is formed into the serpentine design of FIG.2. Portions of the proximal ends 56 and 58 (not visible in FIG. 2) arearc sprayed with nickel to a length of about 0.5 inches and are insertedinto terminal block 24 to connect to conductors 26 a and 26 b,respectively. A resistance across the proximal ends 56, 58, of theigniter body 30 is determined, and based on the resistance,resistivities are determined using Equation (2). The resulting roomtemperature resistivity is 0.38 ohm-cm, and the resulting hightemperature (1000° C.) resistivity is 0.18 ohm-cm.

The resulting igniter 180 sustains a single point load (at the tip ofregion 46) of 0.15 to 1.5 pounds at failure. Under the impact testdescribed previously, the igniter 180 sustains an impact of a one poundsteel weight dropped from a height of less than one inch until failure.The drop test drop height of the igniter 180 is less than three (3)inches. All three levels of iron oxide had good speed at 102V with roomtemperature resistances of <100 ohms and maximum temperature at 132V ofless than 2900F. The 0.45% level of iron oxide gave abbreviatedapplication life due to accelerated oxidation.

EXAMPLE 2

This second example illustrates an implementation of the methods ofFIGS. 8-9, and 11. Silicon carbide, 0.15% aluminum oxide, 1.5% latexresin (by weight and on a water-free basis, i.e., after air curing), andwater are combined to make a first aqueous slurry used to form thedistal leg regions 106 and 108 of FIG. 10. The balance is siliconcarbide which comprises a coarse portion and a fines portion. The coarsefraction is 100F and the fine fraction has a D50 (median) of 2.5-3.0microns. The coarse portion comprises 50 percent by weight of the totalamount of silicon carbide, and the fines portion comprises 50 percent byweight of the total amount of silicon carbide. Silicon carbide, 0.15%aluminum oxide, 5% molybdenum disilicide (a transition metal silicide),1.5% latex resin (by weight on a water free basis, i.e. after aircuring), and water are used to make a second aqueous slurry used to formthe proximal leg regions 102 and 104 of FIG. 10. The balance is siliconcarbide which comprises a coarse portion and a fines portion. The coarsefraction is 100F and the fine fraction has a D50 (median) of 2.5-3.0microns. The coarse portion comprises 50 percent by weight of the totalamount of silicon carbide, and the fines portion comprises 50 percent byweight of the total amount of silicon carbide. Individual igniter moldsare created with a shape corresponding to the igniter body 82. In thiscase, the mold defines the inter-leg spacing 110. The first aqueousslurry is poured into a distal portion of the mold corresponding todistal leg portions 106 and 108, and the second aqueous slurry is pouredin to a proximal portion of the mold corresponding to proximal legregions 102 and 104. The slurries are then air cured, and the resultingunsintered hot surface igniter bodies are removed. 600 green igniterbodies prepared in accordance with the foregoing technique are loadedinto a sintering furnace.

The sintering furnace heating element is energized and placed ontemperature control to control the temperature in the interior of thefurnace. The temperature is ramped from room temperature to a maximumvacuum temperature T_(vac max) of 900° C. at a ramp rate of 20° C./min.Starting at a room temperature of 70° F. (21° C.), the ramp period is1/20 (900-21)=44 minutes.

Once the maximum vacuum temperature T_(vac max) of 900° C. is reached,the furnace is provided with a reducing atmosphere that is substantiallydevoid of nitrogen (except for possibly very small amounts of residualair by back-filling the furnace with 100% argon). A flow of 100% argonto the furnace is then initiated through the furnace at a rate of 5liters/minute. The backfilling process is carried out to create apressure of about 1 psig in the furnace. With the introduction of argon,the first sintering period begins at a first sintering temperature of900° C., which is the maximum temperature reached during the vacuumperiod (T_(vac max)). In FIG. 12, the temperature of 900° C. correspondsto T_(1i).

The first sintering temperature of 900° C. is ramped to a first reducingatmosphere soak temperature T_(RA Soak 1) of 2100° C. at a rate of 15°C./minute during a first ramp period of 80 minutes. Once reached, thefirst soak temperature T_(RA Soak 1) is held for a first soak period of5 minutes. The first sintering temperature is then ramped from the firstsoak temperature T_(RA Soak 1) to a second soak temperatureT_(RA Soak 2) of 2475° C. at a ramp rate of 10° C./minute during asecond ramp period of 37.5 minutes.

Once the second soak temperature T_(RA Soak 2) of 2475° C. is reached,it held for a second soak period of 1 minute, after which apartially-nitrogenated reducing atmosphere of 25 percent nitrogen and 75percent argon is provided by initiating a flow of nitrogen to thesintering furnace as the argon continues to flow. The flow rate of thenitrogen and argon combined is 7 liters per minute. The introduction ofnitrogen begins the second sintering period at an initial secondsintering temperature (T_(2i) in FIG. 12) that is the second soaktemperature T_(RA Soak 2) of 2475° C.

During the second sintering period, the second soak temperatureT_(RA Soak 2) is held for a third soak period of 30 minutes. The secondsintering temperature is then ramped from the second soak temperatureT_(RA Soak 2) of 2475° C. to a third soak temperature T_(RA Soak 3) of2525° C. The attainment of the third soak temperature of 2525° C. beginsthe third sintering period, with the initial third sintering temperature(T_(3i) in FIG. 12) being the third soak temperature of 2525° C. WhileFIG. 3 shows a maximum third sintering period temperature T_(3max) thatis greater than the initial third sintering period temperature ofT_(3i), in this example, the two values are the same. The third soaktemperature T_(RA Soak 3) of 2525° C. is held for a fourth soak periodof 60 minutes.

Following the fourth soak period, a cool down period begins by rampingthe third sintering temperature from the third soak temperatureT_(RA Soak 3) of 2525° C. to 1800° C. at a ramp rate of 10° C./minduring a ramp period of 72.5 minutes. The sintering furnace heatingelement is then de-energized, allowing the sintering furnace temperatureto fall in an unregulated manner. Once the second sintering temperaturereaches 800° C., the flow of nitrogen and argon is discontinued, and thereducing atmosphere is evacuated until a slight vacuum is achieved.

The igniter body is cut into the shape shown in FIG. 13 and the proximalends of legs 192 and 194 are arc sprayed with nickel along about 0.5inch of the igniter body length. The proximal ends (not visible in FIG.13) are connected to conductors 186 a and 186 b in terminal block 184.The assembly has a room temperature resistivity of 3.57 ohm-cm, and a1000° C. resistivity of 1.17 ohm-cm. The length of proximal regions202/204 along the length axis is about 52 percent of the total length ofproximal regions 202/204 and distal regions 206/208 combined along thelength axis.

In order to determine the resistivities of the distal leg regions 206and 208 and the proximal leg regions 204 and 202, a first igniter bodyis prepared using only the composition of distal leg regions 206 and 208and the foregoing process. A second igniter body is prepared using onlythe composition of the proximal leg regions 204 and 202 and theforegoing process. Resistances are measured across each body, and bothroom and high temperature resistivities are determined for each bodyusing equation (2). Using this technique, the high temperature (1000°C.) resistivity of the distal regions 206 and 208 is estimated to beabout 2.14 ohm-cm, and the high temperature resistivity of the proximalregions 204 and 202 is estimated to be about 0.55 ohm-cm. The roomtemperature resistivity of the distal regions 206 and 208 is estimate tobe about 68 ohm-cm. The proximal region zone has a room temperatureresistivity of about 0.50 ohm-cm.

The assembled igniter body 180 has a single point load of 5 to 10 poundsat failure, an impact test drop height (of a one pound weight) in excessof five inches, and a drop test drop height (of the igniter) of 8 to 24inches. The terminal blocks 24 and 184 in FIGS. 2 and 13 are the same.Thus, Examples 1 and 2 demonstrate that the use of the two-leg formfactor of FIG. 13 provides a stronger design than the serpentine formfactor of Example 1.

COMPARATIVE EXAMPLE 1

An igniter body is prepared using the unsintered silicon carbideproximal and distal region compositions of Example 2 but with thesintering process of Example 1. The igniter body is formed as shown inFIG. 13. In Example 2, the introduction of nitrogen into the reducingatmosphere is delayed until the sintering furnace temperature reaches2475° C. In contrast, in Example 1, nitrogen is introduced into thereducing atmosphere at 1100° C.

A resistance is measured across the igniter body between the proximalends of the igniter, and a resistivity is calculated using an equation(2). The sintered igniter body has an overall room temperatureresistivity of 0.53 ohm-cm and an overall high temperature resistivity(1000° C.) of 0.25 ohm-cm. The room temperature resistance of the entireigniter body is 25 ohms, and when a potential difference of 48 Volts isapplied across the proximal ends of the igniter body, the current drawis 4.6 amps when the igniter body temperature reaches 1000° C. Theresulting overall room temperature resistivity is 0.25 ohm-cm. Theresulting overall high temperature resistivity of 0.25 ohm-cm of theigniter assembly is significantly lower than the corresponding value of1.17 ohm-cm in Example 2 and is unsuitable for certain applications.

In one application, the igniter is expected to experience a nominalservice voltage of 120V, a minimum service voltage of about 102V and amaximum service voltage of about 132V. The igniter is required toachieve a temperature (the ignition temperature of the gas to beignited) of 1000° C. starting at room temperature within about 20-60seconds at the minimum voltage of 102V and is required to achieve astable temperature of less than 3000° C. at the maximum voltage of 132V.The minimum voltage temperature specification is provided to ensure thatignition will occur in a timely fashion, and the maximum voltagetemperature specification is provided to avoid overheating and damagingthe igniter. When the sintering process of Example 1 is used to form thetwo zone, two leg igniter of FIG. 13, the resulting 0.25 ohm-cm (hightemperature resistivity) igniter overheats and cannot maintain a stabletemperature of less than 3000° C. at the maximum voltage of 132V.However, when the process of Example 2 is used to form the two zone, twoleg igniter of FIG. 13, the resulting 1.17 ohm-cm (high temperatureresistivity) igniter reaches the ignition temperature in the requiredtime frame at the minimum voltage of 102V and provides stable heating ata temperature below 3000° C. at the maximum voltage of 132V.

COMPARATIVE EXAMPLE 2

An igniter body is prepared using only the proximal region 202, 204composition of Example 2 and is sintered using the sintering process ofExample 2. The igniter body is formed into the shape of igniter body 182of FIG. 13. The overall dimensions of the legs 192 and 194 of igniterbody 182 are the same as in Example 2. The igniter body has an overallresistance of 27 ohms at room temperature. The room temperatureresistivity is 0.53 ohm-cm, and the resistivity at 1200° C. is 0.25ohm-cm. Thus, the overall electrical properties of the igniter with theconductive MoSi₂ material added throughout are equivalent to theelectrical properties of the igniter body of Comparative Example 2,which is prepared by introducing nitrogen at 1100° C. When subjected toa service voltage of 72V, the igniter heats to a temperature of 1300° C.and draws a current of 5.6 amps. Thus, the igniter cannot maintain astable temperature of less than 3000° C. at the maximum voltage of 132V.

Comparative examples 1 and 2 demonstrate how both adjusting thetemperature at which nitrogen is introduced into the reducing atmosphereand adjusting the relative proportions of a proximal region containing aconductive material (such as a transition metal silicide) and a distalregion that is devoid of the conductive material can be used to obtaindesired electrical properties.

COMPARATIVE EXAMPLE 3

An igniter body is prepared using only the distal region 206, 208composition of Example 2 and is sintered using the sintering process ofExample 2. The igniter body is formed into the shape of igniter body 182of FIG. 13. The overall dimensions of the legs overall dimensions of thelegs 192 and 194 of the igniter body 182 are the same as in Example 2.The igniter body has a room temperature resistivity of 68 ohm-cm and ahigh temperature (1000° C.) resistivity of 2.14 ohm-cm. Because of thehigh room temperature resistivity, the igniter cannot reach its ignitiontemperature of 1000° C. in 20-60 seconds, and in fact, does not generateany heat even at the maximum expected service voltage of 120V. Thus, byincluding a zone that comprises a transition metal silicide (MoSi₂), theigniter prepared in accordance with Example 2 is able to reach theignition temperature in the required time frame at the minimum expectedservice voltage of 102V.

Accordingly, it is to be understood that the embodiments of theinvention herein described are merely illustrative of the application ofthe principles of the invention. Reference herein to details of theillustrated embodiments is not intended to limit the scope of theclaims, which themselves recite those features regarded as essential tothe invention.

What is claimed is:
 1. A method of making a sintered hot surface igniterbody, comprising: providing an unsintered, hot surface igniter bodycomprising silicon carbide, wherein the unsintered hot surface igniterbody has a preen density of greater than 70 percent of a theoreticalmaximum density; sintering the unsintered hot surface igniter body in areducing atmosphere comprising nitrogen in an amount ranging from 20mole percent to 80 mole percent of the reducing atmosphere to yield asintered hot surface igniter body, wherein the sintered hot surfaceigniter body has a post sintering density that differs from the greendensity by no more than five (5) percent, said sintering the unsinteredhot surface igniter body in a reducing atmosphere comprises sinteringthe hot surface igniter body at one or more first sintering temperaturesranging from 2075° C. to 2425° C. for a first sintering period of from20 minutes to 150 minutes, and said sintering the unsintered hot surfaceigniter body in the reducing atmosphere during the first sinteringperiod further comprises (i) sintering the unsintered hot surface bodyigniter at a first sintering temperature of at least 2075° C. during asubperiod at east 40 minutes in the reducing atmosphere, and (ii)sintering the unsintered hot surface igniter body at a first sinteringtemperature of at least 2400° C. for a subperiod of at least about 15minutes in the reducing atmosphere.
 2. The method of claim 1, whereinthe green density is less than 95 percent of the maximum theoreticaldensity.
 3. The method of claim 1, wherein the silicon carbide in theunsintered hot surface igniter body comprises a fines portion and acoarse portion, and the coarse portion comprises at least 20 percent byweight of the silicon carbide in the unsintered hot surface igniterbody.
 4. The method of claim 1, wherein the reducing atmosphere furthercomprises a noble gas.
 5. The method of claim 1, wherein the step ofsintering the unsintered hot surface igniter body in the reducingatmosphere further comprises sintering the unsintered hot surfaceigniter during a second sintering period at a second sinteringtemperature of at least 2500° C. for a subperiod of at least about 40minutes.
 6. The method of claim 1, wherein the unsintered hot surfaceigniter body is free of any densification aids selected from the groupconsisting of boron carbide, boron nitride, aluminum carbide, carbon,beryllium oxide, hafnium oxide, and yttrium oxide.
 7. The method ofclaim 1, wherein the sintered hot surface igniter body has a nitrogencontent of from 500 ppm to 1500 ppm by weight of the sintered hotsurface igniter body.
 8. The method of claim 1, wherein the amount ofsilicon carbide in the sintered hot surface igniter body is at least 99percent by weight of the sintered hot surface igniter body.
 9. Themethod of claim 1, wherein the sintered hot surface igniter body has anegative temperature coefficient.
 10. The method of claim 1, wherein thesintered hot surface igniter body has a porosity greater than seven (7)percent.
 11. The method of claim 1, wherein the sintered hot surfaceigniter body consists essentially of silicon carbide, aluminum, iron,and nitrogen.
 12. The method of claim 3, wherein the coarse portion hasa D50 particle size of from 50 microns to 300 microns.
 13. The method ofclaim 3, wherein the fines portion has a D50 particle size of from 0.5microns to 10 microns.
 14. The method of claim 8, wherein sintered hotsurface igniter body comprises at least 200 ppm aluminum by weight ofthe sintered hot surface igniter body.
 15. The method of claim 13,wherein the fines portion has a surface area of greater than 1 m²/g. 16.The method of claim 14, wherein the sintered hot surface igniter bodycomprises no more than 1000ppm of at least one transition metal byweight of the sintered hot surface igniter body.
 17. A method of makinga sintered hot surface igniter body, comprising: providing an unsinteredhot surface igniter body comprising silicon carbide, wherein the siliconcarbide comprises a fines portion and a coarse portion, and the coarseportion comprises at least 20 percent by weight of the silicon carbidein the unsintered hot surface igniter body, and the unsintered hotsurface igniter body is free of any densification aids selected from thegroup consisting of boron carbide, boron nitride, aluminum carbide,carbon, beryllium oxide, hafnium oxide, and yttrium oxide; sintering theunsintered hot surface igniter body in a partially-nitrogenated reducingatmosphere at one or more first sintering temperatures ranging from2075° C. to 2425° C. for a first sintering period of from 20 minutes to150 minutes, wherein said sintering the unsintered hot surface igniterbody for a first sintering period further comprises sintering theunsintered hot surface igniter body at a first sintering periodtemperature of at least 2075° C. during a first subperiod of at least 40minutes in the partially-nitrogenated reducing atmosphere: and sinteringthe unsintered hot surface igniter body during a second sintering periodat a second sintering temperature of at least 2500° C. for a subperiodof at least 40 minutes in the partially-nitrogenated reducingatmosphere.
 18. The method of claim 17, wherein the sintered hot surfaceigniter body has a nitrogen content of from 500 ppm to 1500 ppm byweight of the sintered hot surface igniter body.
 19. The method of claim17, wherein the amount of silicon carbide in the sintered hot surfaceigniter body comprises at least 99 percent by weight of the firstcomposition.
 20. The method of claim 17, wherein sintered hot surfaceigniter body comprises at least 200 ppm aluminum by weight of thesintered hot surface igniter body.
 21. The method of claim 17, whereinthe sintered hot surface igniter body comprises no more than 1000 ppm ofat least one transition metal by weight of the sintered hot surfaceigniter body.
 22. The method of claim 17, wherein the sintered hotsurface igniter body has a negative temperature coefficient.
 23. Themethod of claim 17, wherein the sintered hot surface igniter body has aporosity greater than seven (7) percent.
 24. The method of claim 17,wherein the sintered hot surface igniter body consists essentially ofsilicon carbide, aluminum, iron, and nitrogen.
 25. The method of claim17, wherein the unsintered hot surface igniter body has a green densityof greater than 70 percent of a theoretical maximum density.
 26. Themethod of claim 17, wherein the unsintered hot surface igniter body hasa green density, and the sintered hot surface igniter body has a densitythat differs from the green density by no more than five (5) percent.27. A method of making a sintered hot surface igniter body, comprising:providing an unsintered hot surface igniter body comprising a proximalregion adjacent a distal region along a length axis, wherein theproximal region and the distal region comprise silicon carbide;sintering the unsintered hot surface igniter body to yield a sinteredhot surface igniter body, wherein the sintering step comprises:sintering the unsintered hot surface igniter body in a first reducingatmosphere at a first sintering temperature for a first sinteringperiod, wherein the first reducing atmosphere is substantially devoid ofnitrogen, and the first sintering period is at least 15 minutes; andsintering the unsintered hot surface igniter body in a second reducingatmosphere at a second sintering temperature for a second sinteringperiod, wherein the second reducing atmosphere ispartially-nitrogenated, and the second sintering temperature is at least2400° C. during the second sintering period, the proximal region of theunsintered hot surface igniter body further comprises at least onetransition metal silicide, the distal region of the unsintered hotsurface igniter body is devoid of transition metal silicides, and theamount of the at least one transition metal silicide in the proximalregion is from two percent to twenty percent by weight of the proximalregion of the unsintered hot surface igniter body.
 28. The method ofclaim 27, wherein during the first sintering period the first sinteringtemperature is at least 2000° C. during a subperiod of at least 30minutes.
 29. The method of claim 28, wherein during the first sinteringperiod, the first sintering temperature is no greater than 2525° C. 30.The method of claim 27, wherein the second sintering period is at least10 minutes.
 31. The method of claim 27, wherein the sintering stepfurther comprises sintering the unsintered hot surface igniter bodyduring a third sintering period in the partially-nitrogenated secondreducing atmosphere, wherein the third sintering temperature is at least2500° C. during a subperiod of at least 40 minutes within the thirdsintering period.
 32. The method of claim 27, wherein the first reducingatmosphere comprises a noble gas, and the second partially-nitrogenatedreducing atmosphere comprises the noble gas.
 33. The method of claim 27,wherein the silicon carbide in the distal region of the unsintered hotsurface igniter body comprises a fines portion and a coarse portion, andthe coarse portion comprises at least 20 percent by weight of thesilicon carbide in the distal region.
 34. The method of claim 27,wherein the distal region of the sintered hot surface igniter bodyconsists essentially of silicon carbide, aluminum, and nitrogen.
 35. Themethod of claim 27, wherein the partially-nitrogenated second reducingatmosphere comprises at least 10 mole percent nitrogen and no more than80 mole percent nitrogen based on the total composition of the secondreducing atmosphere.
 36. The method of claim 27, wherein the distalregion has a high temperature resistivity at 1000° C. of from 0.8 ohm-cmto 3.5 ohm-cm.
 37. The method of claim 33, wherein the coarse portionhas a D50 particle size of from 50 microns to 300 microns.
 38. Themethod of claim 34, wherein the proximal region of the hot surfaceigniter body consists essentially of silicon carbide, nitrogen, and atleast one transition metal silicide or transition metal silicide former.39. The method of claim 35, wherein the partially-nitrogenated secondreducing atmosphere consists essentially of nitrogen and argon.
 40. Themethod of claim 36, wherein the distal region has a room temperatureresistivity of at least about 3 ohm-cm.